Etching Characteristics of Silicon Carbide in Hydrogen

Harris, J. M.; Gatos, H. C.; Witt, A. F.

doi:10.1149/1.2411852

Cited by 30 publications

(7 citation statements)

References 1 publication

(1 reference statement)

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“…ID, horizontal, water-cooled, quartz reaction tube using a silane-propane mixture and hydrogen as carrier gas. Details of the experimental arrangement and procedure have been described elsewhere (3). The substrates, (0001) platelets of ~-SiC, were polished with 3~ diamond paste, chemically etched in an alkaline ferricyanide solution (4), and thermally etched in hydrogen at 1650~…”

Section: Methodsmentioning

confidence: 99%

“…The computation of the equilibrium concentrations of the thermodynamically stable species (gaseous and solid) in the present system was carried out with a program (2) based on minimizing the total Gibbs free energy with the constraint of conservation of mass (3). The accuracy of the program was tested by applying it to similar systems for which experimental results were available (4).…”

Section: Introductionmentioning

confidence: 99%

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Growth Characteristics of Alpha-Silicon Carbide

Harris¹,

Gatos²,

Witt³

1971

J. Electrochem. Soc.

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Single‐crystal layers of α‐(hexagonal) silicon carbide false(normalSiCfalse) were successfully deposited on the [0001] and false[000true1¯false] surfaces of α‐normalSiC substrates from silane and propane in a hydrogen atmosphere and in the 1500°–1650°C temperature range. Above 1650°C the amount of normalSiC deposited was found to be significantly decreased because of increased hydrogen etch rates and diffusion‐limited reactant transfer to the substrate. The growth characteristics are best described by a model in which the surface of the sample is in equilibrium with the reactants diffusing through a boundary layer. Undoped n‐type deposits (grown on p‐type substrates) exhibited a resistivity of 0.40 ohm‐cm and a Hall mobility of approximately 200 cm2/V‐sec at 77°C.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth Characteristics of Alpha-Silicon Carbide

Harris¹,

Gatos²,

Witt³

1971

J. Electrochem. Soc.

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“…In H 2 annealing, the SiC surface is exposed to hydrogen flow at temperatures of 1400-1700°C. [3][4][5][6][7][8][9][10] Moreover, dangling bonds on SiC surfaces are terminated after etching with atomic hydrogen above 1100°C. 11 Saidov et al have shown that the character of SiC etching depends not only on the temperature and velocity of the gas flow, but on the heater as well.…”

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confidence: 99%

The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy

Doğan

Johnstone

Yun

et al. 2004

Applied Physics Letters

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6H-SiC was etched with hydrogen at temperatures between 1000 and 1450°C. The etched Si-terminated face for the 6H-SiC wafer was investigated by atomic force microscopy and temperature-dependent current-voltage ͑I-V-T͒ measurements. Mechanical polishing damage was effectively removed by hydrogen etching at temperatures above 1250°C. Atomic force microscopy images revealed that very good surface morphology, atomic layer flatness, and large and large step width were achieved. Schottky diode characteristics were investigated in detail by current-voltage and temperature-dependent current-voltage measurements, and the results showed a transition from defect assisted tunneling to thermionic emission as the annealing temperature was increased from 1250 to 1450°C.

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“…They surmised that the etch rate was limited by the concentration of hydrogen atoms. Previous investigations by Harris et al 14 found the etch rate of SiC to be dependent upon the susceptor material which supports the formation of atomic hydrogen due to the different catalytic properties of the different materials. Also, Nakamura et al 15 showed that stepped surfaces may be obtained on SiC͑0001͒ at temperatures around 1300°C when using HCl/H 2 mixtures, indicating the necessity of atomic hydrogen for this process.…”

Section: A Thermodynamic Considerationsmentioning

confidence: 76%

Characterization of hydrogen etched 6H–SiC(0001) substrates and subsequently grown AlN films

Hartman

Roskowski

Reitmeier

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Wafers of n-type, 6H-SiC͑0001͒ with (N D-N A)ϭ(5.1-7.5)ϫ10 17 and 2.5ϫ10 18 were etched in a flowing 25%H 2 /75%He mixture within the range of 1500-1640°C at 1 atm. Equilibrium thermodynamic calculations indicated that the presence of atomic hydrogen is necessary to achieve etching of SiC. Atomic force microscopy, optical microscopy, and low energy electron diffraction of the etched surface revealed a faceted surface morphology with unit cell and half unit cell high steps and a 1ϫ1 reconstruction. The latter sample also exhibited a much larger number of hexagonal pits on the surface. Annealing the etched samples under ultrahigh vacuum ͑UHV͒ at 1030°C for 15 min resulted in ͑1͒ a reduction of the surface oxygen and adventitious hydrocarbons below the detection limit of Auger electron spectroscopy, ͑2͒ a (ͱ3ϫͱ3)R30°reconstructed surface and ͑3͒ a Si-to-C peak-to-peak height ratio of 1.2. By contrast, using a chemical vapor cleaning ͑CVC͒ process consisting of an exposure to 3000 Langmuir ͑L͒ of silane at 1030°C for 10 min under UHV conditions resulted in a (3ϫ3) surface reconstruction, a Si-to-C ratio of 3.9, and islands of excess silicon. Continued annealing of the latter material for an additional 10 min at 1030°C resulted in a (1ϫ1) LEED pattern with a diffuse ring. Films of AlN grown via MOCVD at a sample platter temperature of 1274°C for 15 min on hydrogen etched wafers having a doping concentration of 8.7ϫ10 17 cm Ϫ3 and cleaned via annealing had a rms roughness value of Ϸ0.4 nm.

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Etching Characteristics of Silicon Carbide in Hydrogen

Cited by 30 publications

References 1 publication

Growth Characteristics of Alpha-Silicon Carbide

Growth Characteristics of Alpha-Silicon Carbide

The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy

Characterization of hydrogen etched 6H–SiC(0001) substrates and subsequently grown AlN films

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