Etching behavior of CdTe and ZnxCd1−x Te single crystals in aqueous H2O2-HBr-lactic acid solutions

Tomashik, Z. F.; Tomashik, V. N.; Gnativ, I. I.; Stratiichuk, I. B.

doi:10.1134/s0020168506080103

Cited by 4 publications

(3 citation statements)

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“…11 The solution with a CDP rate of 1 lm/min was selected for the development and optimization of the CMP process as the material removal with CMP increases 10 to 15 times.…”

Section: Resultsmentioning

confidence: 99%

Chemical–Mechanical Polishing of CdTe and Zn x Cd1−x Te Single Crystals by H2O2(HNO3)–HBr–Organic Solvent Etchant Compositions

Tomashik

Stratiychuk

et al. 2009

Journal of Elec Materi

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Chemical-mechanical polishing of CdTe and Zn x Cd 1Àx Te single-crystal surfaces by bromine-evolving compositions based on aqueous solutions of H 2 O 2 (HNO 3 )-HBr-solvent has been investigated. The dependences of the chemical-mechanical polishing rate on the dilution of the base polishing etchant for various organic components have been determined. The surface condition after such polishing has been investigated using profilometry. The polishing etchant compositions for CdTe and Zn x Cd 1Àx Te single-crystal surfaces and the chemical polishing conditions have been optimized.

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“…11 The solution with a CDP rate of 1 lm/min was selected for the development and optimization of the CMP process as the material removal with CMP increases 10 to 15 times.…”

Section: Resultsmentioning

confidence: 99%

Chemical–Mechanical Polishing of CdTe and Zn x Cd1−x Te Single Crystals by H2O2(HNO3)–HBr–Organic Solvent Etchant Compositions

Tomashik

Stratiychuk

et al. 2009

Journal of Elec Materi

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“…Biocatalytic etching [124]. Copper Acetate Etching [125] photoelectrochemical etching [126,127] Halogen Compounds evolution [128] found as the notable techniques for developing CdSe features, Aqueous H 2 O 2 -HBr-Lactic Acid for CdTe and Zn x Cd 1-x Te [129] Selective Domain Etching [130] Metal Oleate Induced Etching for CdSe/CdS/CdSe rod [131] Plasma etching for ZnS, ZnSe, CdS, and CdTe [132] Aqueous Halogen (B 2 and I 2 ) Solutions etching [133] ion-exchange chemical etching [134] for CdS; I 2 , NH 4 I (I − /I 3− etching) chemical [134] while Nitric, hydrochloric, and phosphoric acid etch pit density solutions for Hg 1−x Cd x Se and Hg 1-x Cd x Te compounds [135] Additionally, pure hydrogen Plasma [136]. CH 4 /H 2 plasma [137].…”

Section: Dry Etchingmentioning

confidence: 99%

Emerging II-VI wide bandgap semiconductor device technologies

Kuddus,

Mostaque,

Mouri

et al. 2024

Phys. Scr.

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The demand for advanced electronic and optoelectronic devices has driven significant research and development efforts toward exploring emerging semiconductor materials with enhanced performance characteristics. II-VI semiconductors have been studied extensively owing to their wide bandgap characteristics, which enable high electron mobility, excellent thermal stability, and resistance to radiation damage. These properties make them well-suited for a range of applications, including solar cells, light-emitting diodes (LEDs), photodetectors, lasers, sensors, and field effect transistors (FETs). In II-VI compounds, both ionic and covalent bonds exist with a higher electronegative nature of the VI-group elements than II-group elements. This existing ionic behavior strongly influences the binding of valence band electrons rather strongly to the lattice atoms. Thus, the II-VI semiconductors such as CdS, CdTe, ZnS, ZnSe, and CdSe possess wide tunable bandgaps (~0.02 to ≥ 4.0 eV) and high absorption coefficients of approximately 106 cm-1, setting them apart from other semiconductors formed by a covalent bond with closely equal atomic weights. This review article delves into the physics of II-VI semiconductor homo/heterojunctions, and the steps involved in device fabrication including lithography, etching, metallization, stability (oxidation and passivation) and polymerization together with several doping strategies. Furthermore, this review explores the process for tuning the distinct physical and chemical properties and a substantial advancement in electronic, and optoelectronic devices, including tools, cutting-edge equipment, and instrumentations. This comprehensive review provides detailed insights into the potential and technological progress of II-VI wide bandgap semiconductor device technology including experienced challenges and prospects.

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“…Ïîëóïðîâîäíèêè òèïà À ²² Â VI , â ÷àñòíîñòè, CdTe è òâåðäûå ðàñòâîðû Zn x Cd 1-x Te è Cd x Hg 1-x Te, íàõîäÿò øèðîêîå ïðèìåíåíèå â ýëåêòðîíèêå ïðè ñîçäàíèè óñòðîéñòâ ñïåöèàëüíîãî íàçíà÷åíèÿ. Èçãîòîâëåííûå íà îñíîâå CdTe è Zn x Cd 1-x Te ïîëóïðîâîäíèêîâûå äåòåêòîðû èîíèçèðóþùåãî èçëó÷åíèÿ îáëàäàþò ðÿäîì ïðåèìóùåñòâ ïî ñðàâíåíèþ ñ àíàëîãè÷íûìè ïðèáîðàìè, â êîòîðûõ â êà÷åñòâå àêòèâíûõ ýëåìåíòîâ èñïîëüçîâàíû êðåìíèåâûå ð-i-n-äèîäû, â ÷àñòíîñòè, íèçêîé (äî 20 êýÂ) ãðàíèöåé äèàïàçîíà ðåãèñòðèðóåìûõ ýíåðãèé è áîëüøåé ÷óâñòâèòåëüíîñòüþ [1]. Ýïèòàêñèàëüíûå ñëîè Cd õ Hg 1-õ Te ÿâëÿþòñÿ îñíîâíûì ìàòåðèàëîì äëÿ ïîëó÷åíèÿ ìíîãîýëåìåíòíûõ ôîòîïðèåìíèêîâ èíôðàêðàñíîé îáëàñòè ñïåêòðà [2].…”

Section: ââåäåíèåunclassified

Liquid-phase interaction of CdTe, ZnxCd1–xTe (x=0.04; 0.1) and Cd0.2Hg0.8Te with HNO3–НІ–C2H4(OH)2 etching compositions

2019

VKhKhT

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Etching behavior of CdTe and ZnxCd1−x Te single crystals in aqueous H2O2-HBr-lactic acid solutions

Cited by 4 publications

References 1 publication

Chemical–Mechanical Polishing of CdTe and Zn x Cd1−x Te Single Crystals by H2O2(HNO3)–HBr–Organic Solvent Etchant Compositions

Chemical–Mechanical Polishing of CdTe and Zn x Cd1−x Te Single Crystals by H2O2(HNO3)–HBr–Organic Solvent Etchant Compositions

Emerging II-VI wide bandgap semiconductor device technologies

Liquid-phase interaction of CdTe, ZnxCd1–xTe (x=0.04; 0.1) and Cd0.2Hg0.8Te with HNO3–НІ–C2H4(OH)2 etching compositions

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