Etched characteristics of nanoscale TiO2 using C4F8-based and BCl3-based gases

Hong, Jong Woo; Kim, Yeon Hee; Kim, Hee Ju; Tak, Hyun Woo; Goong, Soo Nam; Kim, Seong Bae; Bae, Ki Deok; Lee, Jeong Yub; Bae, Hae Soo; Yeom, Geun Young; Kim, Dong Woo

doi:10.1016/j.mssp.2023.107617

Cited by 2 publications

(1 citation statement)

References 14 publications

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“…From OES, species such as CF 2 at 251.9 nm, CH at 390 nm, F at 704 nm, Ar at 750 nm, O at 844.7 nm, etc. could be observed as shown in Figure 6 (a) [19][20][21]. The radical peak intensities such as CF 2 , CH, and F which are related to passivation and etching were normalized by Ar peak intensity to estimate the radical density in the plasma and the results are shown in Figure 6 (b).…”

Section: Resultsmentioning

confidence: 99%

Etch characteristics of maskless Oxide/Nitride/Oxide/Nitride (ONON) stacked structure using C4H2F6-based gas

Cho,

Hong,

Yoo

et al. 2024

Preprint

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Oxide/Nitride/Oxide/Nitride (ONON; SiO2/SiNx/SiO2/SiNx) stacked structure is widely used in the 3D vertical structure of semiconductor cells. Previously, to form a 3D cells, photoresist (PR) was patterned and repeatedly trimmed on the top of ONON after the etching of one ON layer. Due to the time-consuming process of etching layer-by-layer of ON layer, two-step etch processing using C4F8-based or C4F6-based gases composed of maskless ONON stack feature etching and followed one ON layer-by layer etching by PR trimming in the ONON stack feature are employed these days. However, the two-step etching method resulted in poor etch profiles of maskless ONON stack feature in addition to high global warming potential of C4F8 and C4F6. In this study, we investigated the etching of maskless ONON stack feature using C4H2F6-based gas having a low global warming potential and the effects of C4H2F6-based gas on the etch characteristics of maskless ONON stack feature such as etch rate, etch profile, change in critical dimensional (CD), and etch selectivity between SiO2 and SiNx have been investigated. C4H2F6-based gas showed the highest etch rates compared to C4F6 and C4F8-based gases in addition to the etch selectivity of ~1:1 between SiO2 and SiNx due to hydrogen included in the gas structure. In addition, the change in horizontal CD was lower in the order of C4H2F6, C4F6, and C4F8-based gases due to the more effective sidewall passivation in the order of C4F8, C4F6, and C4H2F6-based gases. The thicker carbon-based polymer layer on the sidewall also played an important role in maintaining the shape of the top edge shape of maskless ONON stack feature when etching a line feature in an environment without a mask.

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Section: Resultsmentioning

confidence: 99%