Abstract:The development of optical devices requires the patterning of non-conventional shapes on the wafers [1,2,3,4,5]. In addition to the specific challenges related to the treatment of these curvilinear patterns, an accurate proximity correction must be provided. The Critical Dimensions (CDs) of such patterns are indeed around 100nm, which requires the implementation of advanced lithography processes, similar to CMOS microelectronics technologies. In order to develop a production compliant and robust OPC solution, … Show more
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