Etch Defect Reduction Using SF₆/O₂ Plasma Cleaning and Optimizing Etching Recipe in Photo Resist Masked Gate Poly Silicon Etch Process

Abstract

Since the PAMELA results on the "anomalously" high positron fraction and the lack of antiproton excess in our Galaxy, there has been a tremendous number of studies advocating new types of dark matter, with larger couplings to electrons than to quarks. This raises the question of the production of dark matter particles (and heavy associated coloured states) at LHC. Here, we explore a very simple benchmark dark matter model and show that, in spite of the agreement between the PAMELA antiproton measurements and the expected astrophysical secondary background, there is room for large couplings of a WIMP candidate to heavy quarks. Contrary to what could have been naively anticipated, the PAMELAp/p measurements do not challenge dark matter model building, as far as the quark sector is concerned. A quarkophillic species is therefore not forbidden. Owing to these large couplings, one would expect that a new production channel opens up at the LHC, through quark-quark and quark-gluon interactions. Alas, when the PDF of the quark is taken into account, prospects for a copious production fade away.

Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF4/O2 Plasma Chambers Using Y2O3 and YF3 Protective Coatings

“…In order to solve this problem, yttrium oxide (Y 2 O 3 ) was adopted as plasma-facing inner wall materials in plasma processing equipment because their plasma erosion resistance values are much higher than those of conventional SiO 2 coatings [8,9,10]. Mass-production factories have found that the Y 2 O 3 inner walls have problems with significant erosion and particle generation [11]. Under fluorine-based plasma processing, a thin top carbonaceous polymer reaction layer has been identified depending on the etching conduction and the etched materials [12,13,14].…”

Hydrogenation Effects on Chemical Activity of Defects in Excimer-Laser-Annealed Polycrystalline Silicon Thin Films

“…The plasmasurface interaction induces the changes in the sticking and recombination probabilities of radicals on the wall, 1) resulting in the changes in gas-phase radical densities and surface reactions. Although it is speculated that the changes in gasphase radical densities and surface reactions induce process drifts 2,3) and/or particle generation, [4][5][6] the detailed mechanism and its influence on the process performance have not been understood yet. Al 2 O 3 is a popular plasma-facing material used for the inner walls of plasma processing tools.…”

“…It is pointed out in mass production that Al 2 O 3 inner walls have problems of significant erosion and particle generation when they are exposed to fluorine-based plasmas. [4][5][6] We have reported the difference in fluorination between Al 2 O 3 and Y 2 O 3 surfaces when they are irradiated by high-density CF 4 /O 2 and SF 6 /O 2 plasmas, and have discussed the fluorination mechanisms. 7) The objective of this work is to investigate the effects of the irradiations of H 2 and O 2 plasmas onto a fluorinated Al 2 O 3 surface.…”

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

“…A trace of oxide-like material was etched off just below the contact hole, which may have led to an increase in resistance. In the P active area, this phenomenon did not occur [32], so the contact resistance comparison was made only through the P active area [33]. The resistance and leakage values in the wafer that was processed after the salicide process had stabilized, were compared again.…”