Abstract:Magnetic tunnel junction (MTJ)-related materials such as CoFeB, MgO, and W were etched in a pulse-biased inductively coupled plasma etch system using a CO/NH 3 gas combination, and the effects of substrate temperature (room temperature $200 C) in the pulse-biased condition on the etch characteristics of the MTJ-related material were investigated. The etch selectivity of MTJ materials over W was improved by substrate heating possibly due to the easy removal of the compounds from the etched CoFeB surface during … Show more
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