Etch characteristics of GaN and BN materials in chlorine-based plasmas

Medelci, N.; Tempez, A.; Starikov, D.; Badi, N.; Berishev, I.; Bensaoula, A.

doi:10.1007/s11664-004-0268-6

Cited by 14 publications

(12 citation statements)

References 24 publications

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“…Generally, GaN is etched by inductively coupled plasmareactive ion etching (ICP-RIE). 10,11) Unfortunately, however, plasma readily causes damage to GaN, and there is low etching selectivity between the GaN and the etching mask. The issue of plasma damage has recently been solved by neutral-beam etching (NBE) and atomic-layer etching (ALE) techniques.…”

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confidence: 99%

Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride

Horikiri

Ohta

Asai

et al. 2018

Appl. Phys. Express

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Photo-electrochemical (PEC) etching was used to fabricate deep trench structures in a GaN-on-GaN epilayer grown on n-GaN substrates. A 50-nm-thick layer of Ti used for an etching mask was not removed even after etching to a depth of >30 µm. The width of the side etching was less than 1 µm with high accuracy. The aspect ratio (depth/width) of a 3.3-µm-wide trench with a PEC etching depth of 24.3 µm was 7.3. These results demonstrate the excellent potential of PEC etching for fabricating deep trenches in vertical GaN devices.

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confidence: 99%

Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride

Horikiri

Ohta

Asai

et al. 2018

Appl. Phys. Express

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“…However, it is difficult to etch deep trenches in GaN. Generally, GaN is etched by inductively coupled plasma reactive-ion etching (ICP-RIE) [10,11]. Unfortunately, however, plasma treatment readily causes damage to GaN, and there is low etching selectivity between the GaN and the etching mask.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Horikiri

Sato

Fukuhara

et al. 2019

IEEE Trans. Semicond. Manufact.

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Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than 1 µm, with high accuracy. The aspect ratio (depth/width) of a 3.3-µm-wide trench with a PEC etching depth of 24.3 µm was 7.3. These results demonstrate the excellent potential of PEC etching for fabricating deep trenches in vertical GaN devices. Furthermore, we simplified the PEC etching technology to permit its use in a wafer-scale process. We also demonstrated simple contactless PEC etching technologies for the manufacture of power and RF devices. A trench structure was fabricated in a GaN-on-GaN epilayer by simple contactless PEC etching. The role of the cathodic reaction in contactless PEC etching is discussed in relation to the application of a GaN HEMT epilayer on a semi-insulating substrate. Fortunately, the GaN HEMT structure contains an ohmic electrode that can act as a cathode in contactless PEC etching, thereby permitting the recess etching of a GaN HEMT epilayer grown on a semi-insulating SiC substrate. These results indicate that PEC etching technologies are becoming suitable for use in the fabrication of practical GaN power and RF devices.

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“…It is employed on at least 2 µm thick GaN/ c ‐plane sapphire templates. Usually, dry etching is used with the intention to produce smoothly etched surfaces 10, 11 and a formation of nanostructures on the unmasked area is undesirable. In contrast this contribution aims at finding process parameters on the one hand and sample properties on the other hand by which a high density of nanostructures with an as long as possible length can be achieved on unmasked surfaces.…”

Section: Introductionmentioning

confidence: 99%

Self‐assembled GaN nanostructures by dry etching and their optical properties

Haab

Mikulics

Winden

et al. 2012

Physica Status Solidi (a)

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The influence of process parameters and template characteristics on the morphology and optical properties of self-assembled nanostructures produced by dry etching from GaN/sapphire templates was investigated. It was found that the chemical component in the etching gas-chlorine supports the formation of nanostructures and that a minimum amount of RF and ICP power (i.e., energy) is necessary. Additionally the crystalline imperfec-tion and the doping concentration of the template greatly affect the nanostructure morphology. All nanostructures exhibit higher luminescence intensity than the templates they are fabricated from and exhibit a red-shift of the luminescence with respect to the epilayer. The results indicate effective strain relaxation as well as more efficient absorption of the incoming photons the smaller the nanostructures become.

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Etch characteristics of GaN and BN materials in chlorine-based plasmas

Cited by 14 publications

References 24 publications

Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride

Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Self‐assembled GaN nanostructures by dry etching and their optical properties

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