2001
DOI: 10.3989/cyv.2001.v40.i1.760
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Estudio por espectroscopía infrarroja de la reacción de hidrólisis y policondensación del IEOS en presencia de PDMS

Abstract: En este trabajo se ha estudiado mediante Espectroscop'a Infrarroja por transformada de Fourier la influencia del peso molecular de pol'meros org ‡nicos (PDMS) en la velocidad de hidr-lisis y policondensaci-n de Tetraetilortosilicato (TEOS) en medio acuoso ‡cido. La evoluci-n de las bandas situadas a 880, 1180 y 850 cm -1 permite estudiar los procesos de hidr-lisis, autocondensaci-n y copolimerizaci-n respectivamente. La velocidad de hidr-lisis y la autocondensaci-n de TEOS no se afecta por la presencia de pol'… Show more

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Cited by 9 publications
(9 citation statements)
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“…The presence of a band at 850 cm −1 in TEOS/polysiloxane-based materials has been proposed to arise from condensation between TEOS and PDMS molecules during gel formation. 53 A similar pattern was observed in the FTIR spectrum of T 90 P 10 .…”
Section: Characterization Of Structural Properties Of Ormosilssupporting
confidence: 59%
“…The presence of a band at 850 cm −1 in TEOS/polysiloxane-based materials has been proposed to arise from condensation between TEOS and PDMS molecules during gel formation. 53 A similar pattern was observed in the FTIR spectrum of T 90 P 10 .…”
Section: Characterization Of Structural Properties Of Ormosilssupporting
confidence: 59%
“…First, the stretching band for ArC-C bond appears as a wide band near 1,450 cm -1 , instead of the two well defined bands of PI-DABA25 and PI-Allyl spectra, indicating changes in the chemical environment around the aromatic structure after silylation. However, the band at 1,200 cm -1 , presumably associated to symmetric deformation of Si-CH 3 , and intense bands near 850 and 740 cm -1 associated with stretching vibration of Si-C bond [26], appear in all spectra, while the stretching bands for Si-O bonds in Si-O-Si and Si-O-C units, were overlapped with the stretching vibration of C-F bonds near 1,100 cm -1 [27]. Only the band at 470 cm -1 associated to stretching vibration of O-Si-O bond appeared in the PI-Si spectrum, being representative of the change in the pendant structure after modification with DMES.…”
Section: Resultsmentioning
confidence: 97%
“…There are two absorption bands located at 2960 and 2905 cm -1 attributed to the υ a and υ s of C-H in the -CH 3 group of PDMS, respectively. [25,26]. The absorption bands due to υ a and υ s of Si-O in Si-O-Si bonding of inorganic network appears as a shoulder at 1190 cm -1 and as an intense wide band at 1080 cm -1 , respectively.…”
Section: Resultsmentioning
confidence: 99%