Estimation of the Conversion Properties of Trench-Structured Silicon X-ray Photodiodes by the Side X-ray Irradiation Method

Ariyoshi, Toshihiko; Takane, Yuta; Iwasa, Jumpei; Sakamoto, Kenji; Baba, Akira; Arima, Yutaka

doi:10.7567/ssdm.2017.g-3-04

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“…In this study, we developed a direct-conversion-type X-ray sensor with trench-structured photodiodes formed on a Si substrate. 24) The photodiode characteristics and their basic operation as a direct-conversion-type X-ray sensor have already been confirmed. 25) X-rays can be efficiently detected by directly irradiating the beam along a depletion layer formed around the trench photodiode.…”

Section: Introductionmentioning

confidence: 89%

Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode

Ariyoshi

Takane

Iwasa

et al. 2018

Jpn. J. Appl. Phys.

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In this paper, we report a direct-conversion-type X-ray sensor composed of trench-structured silicon photodiodes, which achieves a high X-ray-tocurrent conversion efficiency under side X-ray irradiation. The silicon X-ray sensor with a length of 22.6 mm and a trench depth of 300 µm was fabricated using a single-poly single-metal 0.35 µm process. X-rays with a tube voltage of 80 kV were irradiated along the trench photodiode from the side of the test chip. The theoretical limit of X-ray-to-current conversion efficiency of 83.8% was achieved at a low reverse bias voltage of 25 V. The X-ray-to-electrical signal conversion efficiency of conventional indirect-conversion-type X-ray sensors is about 10%. Therefore, the developed sensor has a conversion efficiency that is about eight times higher than that of conventional sensors. It is expected that the developed X-ray sensor will be able to markedly lower the radiation dose required for X-ray diagnoses.

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Section: Introductionmentioning

confidence: 89%