Estimation of Temperature-Dependent Band Parameters for Bi-Doped SnSe with High Thermoelectric Performance

Park, Hyunjin; Kim, Sang‐il; Kim, Jeong-Yeon; Hwang, Seong-Mee; Kim, Hyun‐Sik

doi:10.3390/ceramics6010029

Cited by 9 publications

(6 citation statements)

References 27 publications

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“…Kim et al found that Bi doping increases the effective mass of the state density, changes the variation of the energy band parameters with temperature, as shown in Figure 12e-h. [73] Sb is a typical amphoteric metal, and in most cases, it exhibits the þ3 valence state, which can be used for N-type doping to replace Se atoms to form SnSb x Se 1À2x compounds. [74] Further, Sb can be doped to introduce carriers to increase electrical [66] Copyright 2022, Elsevier.…”

Section: Main Group and Metalloid Elementsmentioning

confidence: 99%

“…Kim et al found that Bi doping increases the effective mass of the state density, changes the variation of the energy band parameters with temperature, as shown in Figure 12e–h. [ 73 ]…”

Section: Electric Properties Of Doped Snsementioning

confidence: 99%

mentioning

confidence: 99%

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Enhancing Electrical Transport Performance of Polycrystalline Tin Selenide by Doping Different Elements

Wei,

Zhang,

Lin

et al. 2024

Physica Status Solidi (a)

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In the face of ever‐evolving energy and environmental challenges, tin selenide (SnSe) has garnered significant attention due to its outstanding thermoelectric performance. The article focuses on the research of easily accessible and highly practical polycrystalline SnSe thermoelectric materials, providing an overview of their crystal structure, band structure, and electrical transport performance. Compared with previous studies, this research classifies elements based on their own properties, mainly dividing them into alkali metals, transition metals, main group metals, halogens, and rare earth (Re) elements. The study systematically summarizes the experimental results of doping SnSe with these elements and analyzes the mechanisms by which different elements enhance the electrical transport performance and thermoelectric figure of merit of polycrystalline SnSe. The enhanced mechanism is mainly achieved by increasing the conductivity and Seebeck coefficient. Finally, a systematic analysis is conducted to identify the factors that improve electrical transport performance, and strategies for enhancing the electrical transport and thermoelectric properties of polycrystalline SnSe through precise doping techniques are discussed, with a prospect for their application in the future.

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Section: Main Group and Metalloid Elementsmentioning

confidence: 99%

“…Kim et al found that Bi doping increases the effective mass of the state density, changes the variation of the energy band parameters with temperature, as shown in Figure 12e–h. [ 73 ]…”

Section: Electric Properties Of Doped Snsementioning

confidence: 99%

See 1 more Smart Citation

Enhancing Electrical Transport Performance of Polycrystalline Tin Selenide by Doping Different Elements

Wei,

Zhang,

Lin

et al. 2024

Physica Status Solidi (a)

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“…The strategy to enhance the power factor is primarily achieved by doping specific elements. Extensive past research has confirmed that certain elements such as In, Cd, Ga, Pb, and Bi can effectively regulate the carrier concentration and Seebeck coefficient of SnSe. − Simultaneously, structural engineering and nanostructuring can be employed to effectively reduce the thermal conductivity of the system. The different forms of SnSe precursor powders and the types and contents of microstructure can significantly influence the thermoelectric performance of the sintered final product. − Furthermore, previous research indicates that polycrystalline SnSe often displays strong anisotropy in thermoelectric performance, with outstanding performance limited to a specific direction, presenting challenges for practical device applications.…”

Section: Introductionmentioning

confidence: 99%

Achieving High Isotropic Figure of Merit in Cd and in Codoped Polycrystalline SnSe

Huang,

Gong,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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Here, we combined Cd and In codoping with a simple hydrothermal synthesis method to prepare SnSe powders composed of nanorod-like flowers. After spark plasma sintering, its internal grains inherited well the morphological features of the precursor, and the multiscale microstructure included nanorod-shaped grains, high-density dislocations, and stacking faults, as well as abundant nanoprecipitates, resulting in an ultralow thermal conductivity of 0.15 W m–1 K–1 for the synthesized material. At the same time, Cd and In synergistically regulated the electrical conductivity and Seebeck coefficient of SnSe, leading to an enhanced power factor. Among them, Sn0.94Cd0.03In0.03Se achieved a peak ZT of 1.50 parallel to the pressing direction, representing an 87.5% improvement compared with pure SnSe. Notably, the material possesses isotropic ZT values parallel and perpendicular to the pressing direction, overcoming the characteristic anisotropy in thermal performance observed in previous polycrystalline SnSe-based materials. Our results provide a new strategy for optimizing the performance of thermoelectric materials through structural engineering.

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“…However, it is difficult to increase the PF because the S and σ of the material have a trade-off relationship with a changing Hall carrier concentration (n H ) [2,[4][5][6]. For example, as the n H increases, the σ of a material increases while its S decreases.…”

Section: Introductionmentioning

confidence: 99%

Strategies for the High Average zT in the Electron-Doped SnTe

Park,

Lee,

Heo

et al. 2023

International Journal of Energy Research

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We propose a new strategy to achieve a high average zT in electron-doped SnTe by applying the two-band (TB) and single parabolic band (SPB) models to the electronic transport properties of Sn0.97M0.03Te ( M = Ga , In, Bi, and Sb) reported in the literature. To achieve a high average zT at temperatures from 300 to 823 K, both zT at 300 and 823 K should be high with a steadily increasing zT over the temperatures. The p-type SnTe is known to have a light valence band and a heavy valence band that are approximately 0.40 eV apart. The Bi-doped SnTe exhibits one of the highest zT among all the other doped samples at 300 K (0.09) and the highest zT at 823 K (0.9), with a steadily increasing zT in between. The TB model confirms the presence of the resonant state at 300 K which is responsible for the high zT at 300 K. The B-factor, which is related to the theoretical maximum zT, calculated by the SPB model indicates a steady increase in zT with increasing temperature. The temperature-dependent B-factor of the Bi-doped SnTe suggests that the initial position of its Fermi level at 300 K calculated by the TB model may be responsible for the temperature coefficient of the B-factor, which determines the zT at 823 K. According to the SPB model, experimental zT of 0.9 of the Bi-doped SnTe can be further improved to 1.03 (14% improvement) at 823 K upon carrier concentration optimization. To achieve a high average zT in SnTe, electron doping with a dopant that forms a resonant state and placing the Fermi level at the light valence band in the vicinity of the heavy valence band maximum are both essential.

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Estimation of Temperature-Dependent Band Parameters for Bi-Doped SnSe with High Thermoelectric Performance

Cited by 9 publications

References 27 publications

Enhancing Electrical Transport Performance of Polycrystalline Tin Selenide by Doping Different Elements

Enhancing Electrical Transport Performance of Polycrystalline Tin Selenide by Doping Different Elements

Achieving High Isotropic Figure of Merit in Cd and in Codoped Polycrystalline SnSe

Strategies for the High Average zT in the Electron-Doped SnTe

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