2021
DOI: 10.1002/pssb.202100215
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Estimation of Shockley–Read–Hall Lifetime in Homoepitaxial n‐GaN on Low‐Dislocation‐Density GaN Substrates Prepared by Hydride Vapor Phase Epitaxy and Maskless 3D

Abstract: By eliminating the influence of surface recombination, the reported consideration that on‐resistance of GaN p+n diodes fabricated on free‐standing substrates should be limited by nonradiative recombination around dislocation lines is validated. The validation is based on analyses of 1) bulk nonradiative recombination current densities (Jnr), determined from the y intercept of forward‐current density/inverse of anode radius plots, of diodes fabricated on two kinds of vapor‐phase epitaxially grown freestanding s… Show more

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(2 citation statements)
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“…We used τ n of 5.3 ns and τ p of 23 ns that we derived from the Shockley-Read-Hall lifetime of 200−800 μm diameter GaN p + n diodes formed on M-3D substrates. 27) Note that τ p /τ n of 4.3 comes from σ p /σ n = 4.3 under the assumption σ n in n-GaN is the same as the reported σ n in p-GaN. 31,32) As for μ p , we used a fixed value of 29 cm 2 V −1 s −1 .…”
mentioning
confidence: 97%
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“…We used τ n of 5.3 ns and τ p of 23 ns that we derived from the Shockley-Read-Hall lifetime of 200−800 μm diameter GaN p + n diodes formed on M-3D substrates. 27) Note that τ p /τ n of 4.3 comes from σ p /σ n = 4.3 under the assumption σ n in n-GaN is the same as the reported σ n in p-GaN. 31,32) As for μ p , we used a fixed value of 29 cm 2 V −1 s −1 .…”
mentioning
confidence: 97%
“…1(a)]. I F /V F characteristics were simulated at 300 K in reference to the cylindrical coordinate system 19,20,[27][28][29][30] by using the drift-diffusion model in a commercial device simulator, Silvaco ATLAS. We used τ n of 5.3 ns and τ p of 23 ns that we derived from the Shockley-Read-Hall lifetime of 200−800 μm diameter GaN p + n diodes formed on M-3D substrates.…”
mentioning
confidence: 99%