Estimation of resist blur by overlay measurement

Nakao, S.; Maejima, Shinroku; Hagiwara, Toru; Moniwa, Akemi; Sakai, Juro; Hanawa, Teruo; Suko, Kazuyuki

doi:10.1109/imnc.2007.4456101

Cited by 1 publication

(2 citation statements)

References 6 publications

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“…~400 nm CD-DOF is obtained for ~30 nm width isolated line. In this simulation, the conditions for which are shown in the figure, resist blur for a current ArF resist [10] is taken into account. Therefore, similar DOF can be expected in actual printing with the estimated resist.…”

Section: Outline Of "Sdl" Techniquementioning

confidence: 99%

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Application of super-diffraction-lithography (SDL) for advanced logic

et al. 2008

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~30nm width isolated line is formed with over 300nm DOF by Single Exposure process of ArF immersion lithography. Super-Diffraction-Lithography ("SDL") technique, which utilizes fine dark line image formed between a pair of bright lines in attenuating non-phase-shifting field and which enables formation of very fine isolated line pattern with single exposure, is applied with ArF immersion lithography. By simulation study, superior performance of "SDL" is exhibited for ArF immersion lithography. From view point of mask fabrication, it is shown that requirement for mask technology is not so severe, such that photo mask for "SDL" in hyper NA ArF immersion era can be fabricated with current mask technology. By experiments with an optimum quadrupole illumination, ~30 nm width isolated line is successfully printed by single exposure process with over 300nm DOF by a mature 6% transmission EA-PSM. Moreover, device like pattern with ~35nm line width is well formed with enough large DOF to industrially fabricate devices. We believe this technique is one of the promising candidates for advanced logic at 32 nm node and beyond.

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Section: Outline Of "Sdl" Techniquementioning

confidence: 99%

“…Top layer is chemically amplified positive tone resist with 85 nm coating thickness. The thickness is something thinner in comparing with current application to device fabrication, due to reduction of resist blur for enhancement of resolution [10]. …”

Section: Printing Performance Of "Sdl"mentioning

confidence: 99%