Estimation of diffusion coefficient by photoemission electron microscopy in ion-implanted nanostructures

Lateral straggling and its influence on lateral diffusion in implantation with a focused ion beam

“…The present method appears to be better as the average intensity profile reduces the scatter of data points around the edges of the intensity profile (compare with Ref. [10]). Diffusion coefficient is more precisely determined when a better fit is obtained at the edges of the intensity profile.…”

“…2(b, d, and f) Table 1. In our earlier work [10], where we have determined the diffusion coefficient for only one ion fluence, namely 1 Â 10 15 ions/cm 2 , the value of the diffusion coefficient was found to be 1.3 Â 10 À15 m 2 /s. The value estimated here is about half of that.…”

“…The method has been illustrated in Ref. [10]. Essentially, because of lateral diffusion the edges of the implanted structures will have a concentration gradient of the implanted atoms.…”

“…The concentration profile of the implanted atoms at the opposite edges of the implanted structure can be given by [10][11][12] C A ðx; tÞ…”

“…The method has been presented earlier by us in Ref. [10]. Here we present a slightly different approach in the analysis and results for several ion fluences.…”