Estimating the Switching phenomenon for Se98Te2 and Se96Te2X2 (X=Zn or Cd) Chalcogenide glasses.

Shakra, A.M.

doi:10.1016/j.jnoncrysol.2022.121514

Cited by 8 publications

(4 citation statements)

References 49 publications

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“…The relation between T mid and T sur is proportionally linear and independent of film thickness for all studied films, as shown in figure 15(b) due to the rise of the vibrations amplitude of atoms which increases collisions among the charge carriers and atoms confirming the increase of ∆T BD with temperature as obvious in = 0.541 confirm the electrothermal model's interpretation of the conduction mechanism of switching process for TSG−Sb films. This confirms the electrothermal model for the switching mechanism and is consistent with prior findings ChGs film samples [11,12,28,39,[66][67][68].…”

Section: Bd Thsupporting

confidence: 92%

“…The values of ∆T BD were estimated from the above equation at various temperatures and thicknesses and presented in table 5. It is clear that ∆T BD values increment with temperature for all studied thicknesses and are relatively higher than those of TSG (9.66-17.08 for 597.8 nm) [12], which is consistent with several amorphous chalcogenide glasses [11,12,39,[66][67][68]. Furthermore, the ∆T BD has a slight thickness dependency since the values of ∆ s E are nearly unchanged with film thickness.…”

Section: Bd Thsupporting

confidence: 80%

“…Most non-crystalline materials are known to include dipoles that are irregularly dispersed across the non-crystalline structure. When an electric field is applied, these dipoles are aligned towards the field based on the applied field direction as well as the non-crystalline matrix viscosity [66][67][68]. The temperature of the conduction pathway rises due to self-Joule heating, resulting in a drop in viscosity and an increase in the alignment mechanism of dipoles until the ̅ V th is reached.…”

Section: Temperature and Thickness Dependence Of The Threshold Voltagementioning

confidence: 99%

“…Plot of the average values of the thermal conductivity ̅ Y against temperature is presented in figure 15(a). It is obvious that ̅ Y decrements with rising temperature due to the decrease in thermal energy needed for transforming the filament channel from amorphous to crystalline [66][67][68]. The relation between T mid and T sur is proportionally linear and independent of film thickness for all studied films, as shown in figure 15(b) due to the rise of the vibrations amplitude of atoms which increases collisions among the charge carriers and atoms confirming the increase of ∆T BD with temperature as obvious in = 0.541 confirm the electrothermal model's interpretation of the conduction mechanism of switching process for TSG−Sb films.…”

Section: Bd Thmentioning

confidence: 99%

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Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

El-Metwally,

Ismail

2023

Phys. Scr.

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Quaternary (Tl20Se70Ge10)0.85Sb0.15 chalcogenide glass was synthesized using melt-quenching and thermal evaporation techniques for bulk and thin film samples, and its amorphous character was confirmed by XRD. Based on different models of non-isothermal crystallization kinetics, the average values of the glass transition E ̅ g and the crystallization E ̅ c activation energies are 121.33 and 82.94 kJ mol−1, respectively. The crystallization mechanism in the examined composition is 2D nucleation growth, according to Avrami exponent n . Thermal parameters of the studied quaternary glass, like fragility F g , fluctuation free volume F FV , reduced glass transition temperature T rg , thermal stability SP and glass formation ability GFA were investigated and indicated that the (Tl20Se70Ge10)0.85Sb0.15 ChG exhibits a good ability of glass formation and thermal stability. The obtained results of the dc electrical conductivity σ dc are found to increase with temperature and decrease with film thickness. The electrical conduction activation energy ∆ E σ (0.583 ± 0.004 eV) is thickness independent and the predominant conduction mechanism is the hopping of charge carriers in the band tail localized states. The ( I – V ) curves of (Tl20Se70Ge10)0.85Sb0.15 chalcogenide glass film samples were analyzed and shown to be appropriate for a memory switch. The mean value of the threshold voltage V ̅ th decreases exponentially as temperature increases, whereas it increases linearly as film thickness increases. The values of threshold voltage ε th and threshold resistance ∆ E R activation energies are 0.282 ± 0.003 and 0.521 ± 0.004 eV, respectively. The obtained switching characteristics data were discussed in view of the electrothermal model motivated by current channel Joule heating. These findings highlight the suitability of the investigated composition for various optoelectronic applications, such as memory switching devices, optical data storage, phase-change memories and optical fibres sensing devices.

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