Estimating semiconductor yield from equipment particle measurements

Dance, D.; Gildersleeve, K.

doi:10.1109/ismss.1992.197629

Cited by 6 publications

(2 citation statements)

References 10 publications

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“…Our procedure to generate process defects, which is a critical part of our modeling effort, is based on the idea of zones suggested by Dance and Gildersleeve [6], who calculate zone defect probabilities based on equipment particle measurements. The semiconductor manufacturing process is composed of several basic process units (e.g., photolithography, etching, ion implantation, etc.).…”

Section: Modeling and Analysismentioning

confidence: 99%

Quantifying the benefits of cycle time reduction in semiconductor wafer fabrication

Nemoto

Akçalı

Uzsoy

2000

IEEE Trans. Electron. Packag. Manufact.

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In recent years, semiconductor manufacturing has become increasingly complex due to device size reduction. Hence the manufacturing cycle time, also called turn around time (TAT), which is defined as the time required from wafer input through probing test, becomes longer year by year. This renders the delay between the occurrence of process defects and their detection a significant problem. On the other hand, customer demands for faster delivery are increasing as product life cycles are getting shorter. Hence, TAT reduction is important for semiconductor manufacturers not only to satisfy customer requirements, but also to remain competitive in their market. This paper examines the financial benefits of TAT reduction in ramping up a new process using stochastic simulation. Results indicate that reducing TAT in the ramp-up phase is important, and that even small reductions can have significant effects over the life cycle of a process.

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Section: Modeling and Analysismentioning

confidence: 99%

Quantifying the benefits of cycle time reduction in semiconductor wafer fabrication

Nemoto

Akçalı

Uzsoy

2000

IEEE Trans. Electron. Packag. Manufact.

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“…These 'Killer' particles caused significant drop in production yield and delayed the ramping-up period for mass production of the new devices (2). During the memory device manufacturing process, particles can be produced from the machine tools or equipment (3). Especially the machine-induced particle contamination should be controlled with great care (4), however the current detailed source identification and preventive maintenance techniques have not been sufficient yet despite their critical impact on the production yield.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Particle Generation Mechanism during Dichlorosilane-Based WSi Deposition Process

Kim

et al. 2009

ECS Trans.

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Semiconductor industry faces a continuous challenge to increase the production yield by eliminating defect sources. In this paper, generation of typical defect during dichlorosilane-based WSi2 deposition process is systematically evaluated. The root cause analysis using tape sampling test and parts analysis revealed that the source of silicon particles during the particle generation is due to Vapor-Liquid-Solid(VLS) mechanism. The particle generation according to gas flow rate, susceptor material, susceptor structure were studied systematically. As a result, we found that silicon component particle generation could be suppressed by AlN Coating susceptor with revised structure.

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