Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

Henson, W.K.; Ahmed, K.; Vogel, Eric M.; Hauser, John R.; Wortman, J. J.; Venables, Ranju; Xu, Mingzhen; Venables, D.

doi:10.1109/55.753759

Cited by 157 publications

(64 citation statements)

References 5 publications

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“…These effects lead to underestimation of the true capacitance in accumulation region, if the curve is measured in the parallel mode [11,12]. The correct dependence can be extracted from C-V data measured at two different frequencies using the approach described in [13].…”

Section: Measurement Techniquesmentioning

confidence: 99%

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Gomeniuk¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Capacitance-voltage ( C-V ) and conductance-frequency () techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high for Al-HfO 2 -Si, Pt-Gd 2 O 3 -Si and Pt-LaLuO 3 -Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor.

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Section: Measurement Techniquesmentioning

confidence: 99%

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Gomeniuk¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Figure 2 is a characteristic high frequency C-V curve of the 38 Å Hf-Al-O film with bias voltage from Ϫ6 to 4 V. The accumulation capacitance is 9 nF, and the peak near the transition on the accumulation side may be caused by too much series resistance. 18,19 The relative permittivity of the Hf-Al-O film is calculated to be about 16 and the equivalent oxide thickness to SiO 2 is 9.2 Å for the sample annealed at 500°C for 1 min in oxygen ambient. The inset in Fig.…”

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confidence: 99%

Growth and characterization of Hf–aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

Lee

Wong

Chan

et al. 2003

Journal of Applied Physics

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Ultrathin amorphous Hf-aluminate ͑Hf-Al-O͒ films have been deposited on p-type ͑100͒ Si substrates by pulsed-laser deposition using a composite target containing HfO 2 and Al 2 O 3 plates. Transmission electron microscopy observation of Hf-Al-O films showed that the amorphous structure of Hf-Al-O films was stable under rapid thermal annealing at temperatures up to at least 1000°C. Capacitance-voltage measurement of a 38 Å Hf-Al-O film revealed that the relative permittivity of the film was about 16. Such a film showed very low leakage current density of 4.6ϫ10 Ϫ3 A/cm 2 at 1 V gate bias. The Hf-Al-O film under optimized condition did not show any significant interfacial layer at the interface and an equivalent oxide thickness of less than 10 Å has been achieved. The formation of Hf-O and Al-O bonds in the film was revealed by x-ray photoelectron spectroscopy. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1554764͔A gate dielectric with a relative permittivity higher than that of SiO 2 is required to meet the next generation complementary metal-oxide-semiconductor ͑MOS͒ technology requirement. [1][2][3] Recent publications show that HfO 2 and ZrO 2 as well as their silicates are becoming leading candidates for high-k gate dielectric application due to their thermodynamic stability in contact with Si. 4 -9 However, due to the weakness as an oxygen diffusion barrier of HfO 2 and ZrO 2 , formation of interfacial SiO 2 rich layer in contact with Si substrate or polysilicon gate material is still a problem affecting the application. Formation of silicide at the interface without oxygen is another serious problem.Al 2 O 3 is a well-known good oxygen diffusion barrier that may protect the Si surface from oxidation, 10,11 and Al 2 O 3 is thermodynamically stable in contact with Si. Similar to SiO 2 , Al 2 O 3 is also a good glass former; thus, if alloyed with ZrO 2 and HfO 2 , their amorphous structure can be stabilized during high temperature annealing. 12,13 In addition, Al 2 O 3 has a large band gap ͑8.8 eV͒ and large band offset with Si. To take advantage of both HfO 2 and Al 2 O 3 , it is desirable to make multicomponent MAl x O y ͑MϭHf, Zr͒ films with high dielectric constant that are thermodynamically stable in contact with Si. Recent results on aluminates of Zr ͑Zr-Al-O͒ indicate that such material system exhibits encouraging gate dielectric properties. 12,13 Van Dover and co-workers have reported Zr 0.62 Al 0.38 O 1.8 thin film in which the crystallinity starts to appear at 850°C. 14 Accommodation of Al 2 O 3 layer with HfO 2 films in order to increase the interfacial stability with Si has been reported recently, 8,9 and some thermal stability studies on Hf-Al-O films have also been reported recently. 15 Electrical properties such as electron trapping and band alignment in amorphous Hf-Al-O have also been reported. 16,17 However, the understanding of thermodynamic stability and interfacial structure of the Hf-Al-O thin film is still limited. In this article we report the synthesis and characterization of ...

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“…Thickness of oxide was determined by 1 MHz high frequency C-V measurement. Series resistance (10 ) correction was made taking in to consideration the dc leakage (conductance) current [19].…”

Section: Methodsmentioning

confidence: 99%

Study of SILC and interface trap generation due to high field stressing and its operating temperature dependence in 2.2 nm gate dielectrics

Borse

Vaidya

Chandorkar

2002

IEEE Trans. Electron Devices

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Abstract-This paper reports study of metal-oxide-semiconductor (MOS) capacitors with 2.2 nm dry and N O grown gate dielectrics. Interface trap generation during constant voltage stressing at different operating temperatures (from 22 C to 90 C) has been investigated. The effect of nitrogen annealing (20 min) at 400 C on high temperature stress-induced interface traps was also studied.Index Terms-Oxynitrides, SILC, temperature dependence of interface trap generation, ultra-thin oxides.

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Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

Cited by 157 publications

References 5 publications

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Growth and characterization of Hf–aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

Study of SILC and interface trap generation due to high field stressing and its operating temperature dependence in 2.2 nm gate dielectrics

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