ESR CENTERS AND CHARGE DEFECTS NEAR THE Si/SiO2 INTERFACE

Poindexter, Edward H.; Ahlstrom, E.; Caplan, P. J.

doi:10.1016/b978-0-08-023049-8.50044-0

Cited by 14 publications

(2 citation statements)

References 11 publications

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“…To quote Lucovsky and Lin: "At this point, we conjecture that local bonding configurations in SiO~ that involve either a Si atom dangling bond or Si-Si bond, and a nearest neighbor Si-H group may be one of the important defect clusters in thermally grown SiO~ layers on crystalline Si, contributing to the so called Qs~ defect states." The postulation of the presence of Si dangling bonds in thermal SiO2 is almost certainly unjustifiable; numerous EPR studies of thermal SiO2 on Si have repeatedly failed to detect the presence of a Si dangling bond within the oxide (30)(31)(32). As previously discussed, such EPR studies routinely observe a dangling bond at the silicon interface, the P~ defect.…”

Section: Discussion Of H2 + N2 Annealingmentioning

confidence: 99%

Properties of SiO2 on Si after Exposure to 3:1 H 2 + N 2 and NH 3

Ruggles

Koba

Tressler

1986

J. Electrochem. Soc.

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Thermal oxides ≃100 nm thick were exposed to 3:1 H2+N2 for 30 min at 950°C; similar films were treated in pure ammonia for 30 min at 950°C. The oxides were examined by high frequency and quasi‐static capacitance‐voltage measurements. A silicon internal reflection element (IRE) was processed in a similar manner in order to assess the effects of the thermal processing on the infrared spectrum of the thin film. The IRE was used for attenuated total reflection infrared spectroscopy, a technique that provides greater sensitivity to molecular groups such as Si‐OH, normalSi‐NHx , Si‐H, H2O , and NH3 (1, 2). Secondary ion mass spectrometry revealed the quantitative distributions of N, O, and H throughout a sample film. Ammonia exposure resulted in replacement of oxygen by nitrogen in the amorphous tetrahedral network. Films annealed in 75%H2:25%N2 (the expected dissociation products of NH3 ) were found to exhibit significantly different properties from films nitrided in NH3 , because NH3 did not attain thermodynamic equilibrium before coming in contact with the films. The H2+N2 anneal apparently increased the degree of oxygen bridging in SiO2 . Based on the IR data, a new model is proposed to explain the annealing of interface traps via H2 . Hydrogen is suspected to act as a catalyst, promoting bond rearrangement in the amorphous network. Nonbridging oxygen atoms are thought to bond to dangling silicon orbitals at the oxide/Si interface, thereby reducing the density of defects responsible for Dnormalit .

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Section: Discussion Of H2 + N2 Annealingmentioning

confidence: 99%

Properties of SiO2 on Si after Exposure to 3:1 H 2 + N 2 and NH 3

Ruggles

Koba

Tressler

1986

J. Electrochem. Soc.

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“…The passivation process is described by the equation 6where is the passivated dangling bond [24]- [27]. These measurements indicate that for the oxides grown on Si(111), the density of the interface trap states in the middle of the forbidden gap decreases from 10 -10 cm eV to about 10 cm eV after the post-metal anneal process step [19]- [26]. The Si(100)/SiO material system, which is technologically more significant, exhibits the same qualitative behavior [28], [29].…”

Section: Degradation Of Transistors and Reliability Involving Hymentioning

confidence: 92%