2019
DOI: 10.1016/j.optmat.2019.02.013
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ESR and luminescent properties of anion-deficient α-Al2O3 single crystals after high-dose irradiation by a pulsed electron beam

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Cited by 10 publications
(5 citation statements)
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“…On the other hand, in electron paramagnetic resonance (EPR) spectroscopy, the defective meso‐Al 2 O 3 shows a remarkable symmetric absorption peak (Figure 2c) at around 326.7 mT. The g‐factor of the EPR absorption line was calculated to be 2.011, indexing to electrons captured by oxygen vacancies [19] . In X‐ray photoelectron spectroscopy (XPS) curves (Figure S5), the Al 2p peak of meso‐Al 2 O 3 shifts from 74.3 eV to 74.7 eV, further suggesting the presence of oxygen vacancies in defective meso‐Al 2 O 3 .…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, in electron paramagnetic resonance (EPR) spectroscopy, the defective meso‐Al 2 O 3 shows a remarkable symmetric absorption peak (Figure 2c) at around 326.7 mT. The g‐factor of the EPR absorption line was calculated to be 2.011, indexing to electrons captured by oxygen vacancies [19] . In X‐ray photoelectron spectroscopy (XPS) curves (Figure S5), the Al 2p peak of meso‐Al 2 O 3 shifts from 74.3 eV to 74.7 eV, further suggesting the presence of oxygen vacancies in defective meso‐Al 2 O 3 .…”
Section: Resultsmentioning
confidence: 99%
“…[ 18,19 ] In the last few decades, many proven efforts have been spent to study the optical properties and structural defect inhomogeneities caused by both the growth procedure and the radiation‐induced point and extended defects in Gd 3 Ga 5 O 12 single crystals. [ 3,5,14,20–27 ] It should be noted here that, in contrast to well‐studied oxide materials, such as MgO, CaO, Al 2 O 3 , MgAl 2 O 4 , etc., [ 28–45 ] the existing understanding of the nature of radiation defects and appropriate radiation‐induced processes in Gd 3 Ga 5 O 12 is still insufficient.…”
Section: Introductionmentioning
confidence: 99%
“…[18,19] In the last few decades, many proven efforts have been spent to study the optical properties and structural defect inhomogeneities caused by both the growth procedure and the radiation-induced point and extended defects in Gd 3 Ga 5 O 12 single crystals. [3,5,14,[20][21][22][23][24][25][26][27] It should be noted here that, in contrast to well-studied oxide materials, such as MgO, CaO, Al 2 O 3 , MgAl 2 O 4 , etc., [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45] the existing understanding of the nature of radiation defects and appropriate radiation-induced processes in Gd 3 Ga 5 O 12 is still insufficient. This is mainly due to the lack of experimental data, which, in turn, is associated with the low efficiency of point defect formation in Gd 3 Ga 5 O 12 single crystals.…”
mentioning
confidence: 99%
“…An ordinary F-center consists of one electron captured by a halogen vacancy [1,2,5]. Such F (Farbe) centers in alkali halides and alkaline-earth halides and oxides have been studied for many decades [1,2,[5][6][7][8][9][10][11][12]. Thus, F-centers are defects in ionic crystals in which an anion is replaced by one or more trapped electrons.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, F-centers are defects in ionic crystals in which an anion is replaced by one or more trapped electrons. These vacancy-trapped electrons, confined and screened by the surrounding crystal lattice, thus form gap states with unique optical, electrical and magnetic properties [7][8][9][10][11][12][13][14][15][16] that are relevant to different optoelectronic devices. How efficient the formation is of point defects, including F-centers, is also the determining factor of the material radiation resistance in nuclear applications [17][18][19][20][21].…”
Section: Introductionmentioning
confidence: 99%