ESD Reliability Study of a-Si:H Thin-Film Transistor Technology: Physical Insights and Technological Implications

Sinha, Rajat; Bhattacharya, P.; Iben, Icko; Sambandan, Sanjiv; Shrivastava, Mayank

doi:10.1109/ted.2019.2913040

Cited by 13 publications

(8 citation statements)

References 24 publications

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“…Sinha et al reported that adding a passivation film on the top of the active layer of a-Si:H TFT can enhance ESD robustness. [53] A layer of silicon nitride (SiN x ) is deposited on the top of active layer by plasma enhanced chemical vapor deposition as shown in Figure 11b. Compared with the device without SiN x film (Figure 11a), the top passivation film makes the carriers accumulate near the Si/SiN x interface, and also reduces the concentration of the dangling bonds.…”

Section: Methods For Improving the Esd Robustness Of Tftmentioning

confidence: 99%

“…[52] In addition, the capacitance voltage characteristics of devices before and after pulse application are tested to characterize the changes of the defect state in the gate dielectric layer. [53] The low-frequency noise signal can be used to analyze the density and spatial distribution of trap charges in the gate dielectrics. [54] In the non-electrical characterization, the specific failure position of TFTs can be analyzed by optical microscope (OM) and scanning electron microscope (SEM).…”

Section: Failure Characterization Toolsmentioning

confidence: 99%

“…[56] COMSOL simulation software can simulate the field intensity distribution inside the devices and the physical changes of the active layer can be characterized by Raman spectroscopy. [53]…”

Section: Failure Characterization Toolsmentioning

confidence: 99%

“…The current sensor and high frequency oscilloscope were used to collect the transient signal and record the transient changes. [53,84,85] In addition, Micro-Raman spectroscopy and SEM were utilized to study the stressinduced material changes in devices. As shown in Figure 4b, the degradation of the device is divided into two stages: the first stage is sub-threshold conduction, and the starting point of degradation can be found through the spot voltage, as shown in Figure 4c.…”

Section: Esd Research Of Amorphous Si Based Tftsmentioning

confidence: 99%

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Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Yan

Lan

Chen

et al. 2021

Adv Elect Materials

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Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability of electronic components, which can result in a very high current passing through the device or microchip within a very short period of time, and cause serious irreversible damage. Thin film transistors (TFTs) are widely used in flat panel display, sensor, memristor, radio frequency identification, and other fields. But unlike the CMOS technology, TFTs can be fabricated in several various processes including amorphous Si, polycrystalline Si, metal oxide, organics, etc. As such, TFTs are prone to different types of reliability issues, and a unified overview on the subject would be beneficial to the electron devices community. The topic of the reliability issues of TFTs in different processes subject to ESD stresses has gained increasing attentions, but the reports and results are scattered. In the review, the existing articles on this topic are summarized. The characterization of TFTs under ESD stress is introduced and the failure mechanisms of various semiconductor based TFTs are compared and analyzed. Optimization methods to improve ESD robustness are presented. Finally, a conclusion and a perspective in the field of research on ESD reliability of TFTs are summarized.

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Section: Methods For Improving the Esd Robustness Of Tftmentioning

confidence: 99%

Section: Failure Characterization Toolsmentioning

confidence: 99%

Section: Failure Characterization Toolsmentioning

confidence: 99%

Section: Esd Research Of Amorphous Si Based Tftsmentioning

confidence: 99%

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Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Yan

Lan

Chen

et al. 2021

Adv Elect Materials

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“…Some published works on the topic include [8][9][10]. Knowledge on reliability for amorphous Si is more abundant [11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

Simicic

Ashif

Hellings

et al. 2020

Microelectronics Reliability

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The thin-film-transistor (TFT) technology has attracted significant attention in account of the possibility to manufacture transistors on large and flexible substrates, at low processing temperatures and at a low cost. Next to the well-established amorphous silicon TFT technology used mostly for displays, the amorphous Indium-Gallium-Zinc-Oxide (IGZO) and Indium-Tin-Zinc-Oxide (ITZO) materials offer a higher current conductivity and thus a better performance. This makes them interesting candidates for TFT integrated circuits also beyond displays. However, integrated circuits can be easily damaged by electrostatic discharges (ESD) and require integrated protection solutions. To find possible vulnerabilities and solutions, this paper analyzes ESD robustness of two IGZO and one ITZO TFT device architecture. Measurement methodsElectrostatic discharge (ESD) events appear regularly in the environment. Part of these events can be replicated in laboratory using the Human Body Model (HBM). However, the HBM ESD tester produces a relatively complex waveform and is mostly used to perform pass/fail tests. The Transmission Line Pulser (TLP) is the academic equivalent of

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Introduction

Hafdi

2023

Amorphous Silicon Thin-Film Transistors

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ESD Reliability Study of a-Si:H Thin-Film Transistor Technology: Physical Insights and Technological Implications

Cited by 13 publications

References 24 publications

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

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