“…Concerning the increase of the the saturation current, it has been shown that an increase of the current for a given voltage can be explained by a decrease in carrier lifetime, which can be due to the introduction of non radiative recombination centres [16,19].…”
Section: Discussionmentioning
confidence: 99%
“…Such defects act as non radiative recombination centres, and should therefore impact low level I-V characteristics [16]. Figure 2 presents low level 10g(I)-V characteristics prior to, straight after irradiation at 5.10 12 p+I cnr', and after forward bias annealing.…”
Quantum dash lasers were irradiated for the first time, using 31 MeV protons. These novel structures, which show promising performances for 1.55 11m optical comm unications exhibit better robustness to radiation than quantum well lasers.
“…Concerning the increase of the the saturation current, it has been shown that an increase of the current for a given voltage can be explained by a decrease in carrier lifetime, which can be due to the introduction of non radiative recombination centres [16,19].…”
Section: Discussionmentioning
confidence: 99%
“…Such defects act as non radiative recombination centres, and should therefore impact low level I-V characteristics [16]. Figure 2 presents low level 10g(I)-V characteristics prior to, straight after irradiation at 5.10 12 p+I cnr', and after forward bias annealing.…”
Quantum dash lasers were irradiated for the first time, using 31 MeV protons. These novel structures, which show promising performances for 1.55 11m optical comm unications exhibit better robustness to radiation than quantum well lasers.
The reliability of DHBC and DFB InGaAsPHnP lasers has been evaluated by means of high-temperature operating life tests between 80 and 110°C. The main failure mechanisms have been related to the stability of the active layer, thus demonstrating the applicability of these high temperatures to the evaluation of InP-based lasers KEY WORDS Degradation Failure mode Failure mechanisms Laser Reliability
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