ESD-related latent failures of InGaAsP/InP laser diodes for telecommunication equipments

Proton irradiation effects on InAs / InP quantum dash laser diodes emitting at 1.55 µm

“…Concerning the increase of the the saturation current, it has been shown that an increase of the current for a given voltage can be explained by a decrease in carrier lifetime, which can be due to the introduction of non radiative recombination centres [16,19].…”

“…Such defects act as non radiative recombination centres, and should therefore impact low level I-V characteristics [16]. Figure 2 presents low level 10g(I)-V characteristics prior to, straight after irradiation at 5.10 12 p+I cnr', and after forward bias annealing.…”