ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

Lin, Chun Yu; Chu, Li-Wei; Ker, Ming‐Dou; Song, Ming-Hsiang; Jou, Chewn-Pu; Lu, Tse-Hua; Tseng, Jeng‐Sen; Tsai, Ming-Hsien; Hsu, Tsun-Lai; Hung, Ping-Fang; Chang, Tzu-Heng

doi:10.1109/irps.2012.6241893

Cited by 4 publications

(2 citation statements)

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“…In this scenario, the design of circuits allowing to protect the mm-wave circuits and systems against ESDs while reducing their impact in the mm-wave design is a subject of major interest in the RF community. Several solutions have been studied in recent years [4]- [8]. Baluns have been cited [4], which allows relatively natural isolation, or the use of compensation circuits based either on an inductance or on a transmission line [5]- [8].…”

Section: Introductionmentioning

confidence: 99%

“…Several solutions have been studied in recent years [4]- [8]. Baluns have been cited [4], which allows relatively natural isolation, or the use of compensation circuits based either on an inductance or on a transmission line [5]- [8]. However, in all cases, the solutions proposed turn out to be narrow band, which obliges the designers to design protection for each considered frequency band.…”

Section: Introductionmentioning

confidence: 99%

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ESD mm-Wave-Circuit Protection: 3-dB Couplers

Margalef‐Rovira

Pelletier

Avramovic

et al. 2021

IEEE Trans. Electron Devices

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This paper presents an innovative architecture for the implementation of an Electrostatic Discharge (ESD) protection for mm-wave devices. The proposed architecture is based on the use of 3-dB couplers, whose coupled outputs have been shorted to the ground node. In order to reduce the physical dimensions of the 3-dB coupler and to reach the high coupling required for this application, the Coupled Slow-wave CoPlanar Waveguides (CS-CPW) architecture was favored. The demonstrator of the proposed system was fabricated in the ST Microelectronics 55-nm BiCMOS technology, demonstrating a return loss greater than 10 dB across the 50 to 160 GHz frequency range, an attenuation greater than 18 dB below 5 GHz and a minimum insertion loss at 90 GHz of 0.55 dB. To prove the performance of the proposed solution, HBM and CDM events were simulated at the input of the 3-dB coupler, showing that the proposed architecture effectively protects against these events while minimally impacting the RF path.

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