ESD concerns in sawing wafers with discrete semiconductor devices

Yan, K.P.; Gaertner, Reinhold; Wong, CY; Ng, Kwok K.

doi:10.1109/eosesd.2007.4401754

Cited by 6 publications

(1 citation statement)

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“…The deionized water is highly isolating with a resistivity of several 10 7 Ωcm. This increases the risk of static charge generation at the wafer surface during the high pressure spray rinse process [4,5]. Such charge carriers at the isolating layer at a defined distance to the dicing line are most probably responsible for the observed weak strips.…”

Section: Measurements Before and After Dicingmentioning

confidence: 99%

Optimizing the quality of silicon strip sensors produced by Infineon Technologies Austria AG

Treberspurg¹,

Bartl²,

Bergauer³

et al. 2014

J. Inst.

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The tracking systems of most modern particle physics experiments are realized by silicon based sensors. The size of such systems has continuously increased and nowadays a sensitive area of several 100 m 2 has to be covered. This large amount of sensors might exceed the production capabilities of existing companies and institutes. Therefore the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) and the European semiconductor manufacturer Infineon Technologies Austria AG developed together a production process for p-on-n strip sensors. Although the first prototype run has shown a promising quality, it has been observed that weak strips exist, which are mainly located at distinctive areas on each wafer. At these areas the affected parameters are correlated to each other. A similar behaviour could be reproduced with a smaller second batch, whose sensors have been used for further analysis and advanced measurements. This paper sums up the characteristic behaviour of the specific effect and presents different possibilities how to cure the sensors. The systematic accumulation of weak strips can be traced back to a specific operation during the fabrication process. All data strongly indicate that the effect is caused by local charging effects on an isolating layer.

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Section: Measurements Before and After Dicingmentioning

confidence: 99%