ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique

Rigato, Matteo; Fleury, Clément; Heer, Michael; Capriotti, Mattia; Simbürger, W.; Pogány, D.

doi:10.1016/j.microrel.2015.06.019

Cited by 3 publications

(1 citation statement)

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“…In these papers the high electric field in the oxide and the high temperature increase are addressed as the failure cause. However, in the field of power semiconductor devices, only few works deal with ESD capability [14,15] and only a recent work regards the ESD capability for 200 V FRED diodes [16]. …”

Section: Esd Failuresmentioning

confidence: 99%

Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes

Maresca

Romano

et al. 2018

Energies

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Abstract:Silicon power diodes are used to design different types of electrical energy systems. Their performance has been improved substantially, as a result of a concentrated research efforts that have taken place in the last two decades. They are considered immune to electrostatic discharge (ESD) failures, since usually they withstand an avalanche energy one order of magnitude higher than that of the ESD. Consequently, few works consider this aspect. However, it was observed that during the mounting of power diodes in automotive systems (e.g., with operators touching and handling the devices), ESD events occur and devices fail. In this paper the ESD capability of 600 V fast recovery epitaxial diode (FRED) is analyzed by means of Technology Computer-Aided Design (TCAD) simulations, theoretical analyses and experimental characterization. Two doping profiles are investigated in order to improve the ESD robustness of a standard device and an optimized doping profile is proposed. The proposed design exhibits a higher ESD robustness and this is due to its superior capability in keeping the current distribution uniform in the structure in a critical condition such as the impact ionization avalanche effect. Both experimental and numerical results validate the proposed design.

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Section: Esd Failuresmentioning

confidence: 99%