ESD-capability Improvement of Ultra-high Voltage nLDMOS Components by the Drain Side Engineering

Lai, James S.; Chen, Shen-Li; Liu, Zhiwei; Chung, Yu-Jie; Mai, Xing-Chen

doi:10.1109/ifeec53238.2021.9661612

Cited by 1 publication

(1 citation statement)

References 14 publications

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“…[22], [23]. Metal silicide (titanium silicide or platinum silicide, for example), which is usually used as the contact layer in conventional integrated circuit process, on the top of lightly doped p-base will form the Schottky contact [24]- [27].…”

Section: Proposed Process Stepsmentioning

confidence: 99%

A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier

Zhang

Zhu

Chen

2024

IEICE Trans. Electron.

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In this paper, a novel trench MOS barrier Schottky contact super barrier rectifier (TMB-SSBR) is proposed by combining the advantages of vertical SSBR and conventional TMBS. The operation mechanism and simulation verification are presented. TMB-SSBR consists of MOS trenches with a vertical SSBR grid which replaces the Schottky diode in the mesa of a TMBS. Due to the presence of top p-n junction in the proposed TMB-SSBR, the image force barrier lowering effect is eliminated, the pinching off electric field effect by MOS trenches is weakened, so that the mesa surface electric field is much larger than that in conventional TMBS. Therefore, the mesa width is enlarged and the n-drift concentration is slightly increased, which results in a low specific on-resistance and a good tradeoff between reverse leakage currents and forward voltages. Compared to a conventional TMBS, simulation results show that, with the same breakdown voltage of 124 V and the same reverse leakage current at room temperature, TMB-SSBR increases the figure of merit (FOM, equates to V 2 B /R on,sp ) by 25.5%, and decreases the reverse leakage by 33.3% at the temperature of 423 K. Just like the development from SBD to TMBS, from TMBS to TMB-SSBR also brings obvious improvement of performance.

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Section: Proposed Process Stepsmentioning

confidence: 99%