2007
DOI: 10.1103/physreva.75.042329
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Errors in trapped-ion quantum gates due to spontaneous photon scattering

Abstract: We analyze the error in trapped-ion, hyperfine qubit, quantum gates due to spontaneous scattering of photons from the gate laser beams. We investigate single-qubit rotations that are based on stimulated Raman transitions and two-qubit entangling phase-gates that are based on spin-dependent optical dipole forces. This error is compared between different ion species currently being investigated as possible quantum information carriers. For both gate types we show that with attainable laser powers the scattering … Show more

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Cited by 166 publications
(234 citation statements)
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“…The relatively light mass yields deeper traps and higher motional frequencies for given applied potentials, and facilitates fast ion transport [9,10]. Light mass also yields stronger laser-induced effective spin-spin coupling (inversely proportional to the mass), which can yield less spontaneous emission error for a given laser intensity [11]. However, a disadvantage of 9 Be + ion qubits compared to some heavier ions such as 40 Ca + and 43 Ca + [12,13] has been the difficulty of producing and controlling the ultraviolet (313 nm) light required to drive 9 Be + stimulated-Raman transitions.…”
mentioning
confidence: 99%
“…The relatively light mass yields deeper traps and higher motional frequencies for given applied potentials, and facilitates fast ion transport [9,10]. Light mass also yields stronger laser-induced effective spin-spin coupling (inversely proportional to the mass), which can yield less spontaneous emission error for a given laser intensity [11]. However, a disadvantage of 9 Be + ion qubits compared to some heavier ions such as 40 Ca + and 43 Ca + [12,13] has been the difficulty of producing and controlling the ultraviolet (313 nm) light required to drive 9 Be + stimulated-Raman transitions.…”
mentioning
confidence: 99%
“…During the sideband cooling process, ions experience recoil from both Raman and repumping pulses. The recoil heating due to Raman beams arises from transitions through the | 2 P 3/2 excited states [26]. The heating rate due to Raman scattering is estimated to be < 10 −4 quanta/µs for each motional mode [21], both theoretically and via calibration experiments on a single 25 Mg + for a given Raman beam intensity [27].…”
mentioning
confidence: 99%
“…The heating rate due to Raman scattering is estimated to be < 10 −4 quanta/µs for each motional mode [21], both theoretically and via calibration experiments on a single 25 Mg + for a given Raman beam intensity [27]. The Rayleigh scattering rate due to the Raman beams is estimated to be 50 % of the Raman scattering rate [26]. The resulting heating is independent of the frequency difference between Raman beams and all motional modes will heat each time the Raman beams are applied to the ions.…”
mentioning
confidence: 99%
“…During the sideband cooling process, ions experience recoil from both Raman and repumping pulses. The recoil heating due to Raman beams arises from transitions through the j 2 P 3=2 i excited states [31]. The heating rate due to Raman scattering is estimated to be <10 −4 quanta=μs for each motional mode [21], both theoretically and via calibration experiments on a single 25 Mg þ for a given Raman beam intensity [32].…”
mentioning
confidence: 99%
“…The heating rate due to Raman scattering is estimated to be <10 −4 quanta=μs for each motional mode [21], both theoretically and via calibration experiments on a single 25 Mg þ for a given Raman beam intensity [32]. The Rayleigh scattering rate due to the Raman beams is estimated to be 50% of the Raman scattering rate [31]. The resulting heating is independent of the frequency difference between Raman beams, and all motional modes will heat each time the Raman beams are applied to the ions.…”
mentioning
confidence: 99%