Error-Free 56 Gb/s NRZ Modulation of a 1530-nm VCSEL Link

Kuchta, Daniel M.; Huynh, Tam N.; Doany, F. E.; Schares, Laurent; Baks, Christian; Neumeyr, Christian; Daly, Aidan; Kögel, Benjamin; Rosskopf, J.; Ortsiefer, M.

doi:10.1109/jlt.2016.2552220

Cited by 29 publications

(9 citation statements)

References 22 publications

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“…In combination with a higher photonphoton resonance (obtained with a shorter external cavity), this will result in a higher 3dB modulation bandwidth. The use of a driver with FFE [10] should allow to obtain higher bitrates, even with the laser diodes on which we reported in this paper.…”

Section: Discussionmentioning

confidence: 96%

“…The bonding is done using machine bonding with a close to 100% bonding yield. Coupling between the InP waveguide and the 400nm thick silicon waveguide occurs by means of tapers (as described in [8]), and coupling from the silicon waveguide to optical fiber occurs by means of surface grating couplers [10], which are separated by 1000 m. The DFB laser part (not including tapers) is typically 340 m long, with an InP mesa width of 3.5 m.…”

Section: Design Fabrication and Static Characteristicsmentioning

confidence: 99%

“…This can be seen very well in the BER curves; there is a significantly higher BER for larger word lengths, but only a small penalty associated with the transmission over the 2km of fiber. It is also remarked that the different eye diagrams and BER curves were recorded without any use of Feed Forward Equalisation (FFE, [10]). Modulation at 43 Gb/s was also possible, but with larger BER values and only for a word length of 2 7 -1.…”

Section: High Speed Modulation Experimentsmentioning

confidence: 99%

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43 Gb/s NRZ-OOK Direct Modulation of a Heterogeneously Integrated InP/Si DFB Laser

Abbasi

Keyvaninia

Verbist

et al. 2017

J. Lightwave Technol.

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Abstract-We discuss how InP membrane laser diodes, heterogeneously integrated on SOI can be designed for high speed operation and how one can take advantage of the heterogeneous integration. This is illustrated with several static and dynamic characteristics of fabricated 1550nm lasers. We show non-return to zero on-off keying at 43 Gb/s and report link experiments over 2 km of nonzero dispersion shifted fiber with the directly modulated laser diodes.

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Section: Discussionmentioning

confidence: 96%

Section: Design Fabrication and Static Characteristicsmentioning

confidence: 99%

Section: High Speed Modulation Experimentsmentioning

confidence: 99%

See 1 more Smart Citation

43 Gb/s NRZ-OOK Direct Modulation of a Heterogeneously Integrated InP/Si DFB Laser

Abbasi

Keyvaninia

Verbist

et al. 2017

J. Lightwave Technol.

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“…В то же время ВИЛ спектрального диапазона 1.55 µm, выращенные методом молекулярно-пучковой эпитаксии (МПЭ) на основе технологии ЗТП, в конструкции с коротким оптическим резонатором и диэлектриче-скими РБО демонстрируют большее быстродействие (скорость пере-дачи данных до 56 Gbit/s) [2,6]. Однако малая выходная оптическая мощность ВИЛ с ЗТП (не превышает 2.2 mW в одномодовом режиме генерации [7]) не позволяет их использовать в системах плотного муль-типлексирования с разделением по длине волны (DWDM-системы) [8,9].…”

Section: поступило в редакцию 31 июля 2017 гunclassified

Вертикально-излучающие лазеры спектрального диапазона 1.55 mum, сформированные методом спекания

Бабичев¹,

Карачинский²,

Новиков³

et al. 2018

Письма В Журнал Технической Физики

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The results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

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“…In recent years, there has been an increasing attention for the application of III‐V/Si lasers as directly modulated optical transmitters for interconnects and passive optical networks. In the past, III‐V‐on‐Si lasers operating at bit rates of 12.5 Gb/s and ∼20 Gb/s have been demonstrated, which is still significantly lower than the bit rates obtained with state‐of‐the‐art monolithic InP DFB/DBR lasers and long wavelength VCSELs . The highest direct modulation speed for III‐V‐on‐Si lasers had until recently been obtained for a laser with external cavity based on two cascaded ring resonators, as shown schematically in Figure .…”

Section: Introductionmentioning

confidence: 99%

Novel Light Source Integration Approaches for Silicon Photonics

Wang

Abbasi

Dave

et al. 2017

Laser & Photonics Reviews

166

108

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Silicon does not emit light efficiently, therefore the integration of other light-emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration approaches have been extensively explored in the past decade. Here, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots. The basic approaches to create waveguide-coupled on-chip light sources for different application scenarios are discussed, both for silicon and silicon nitride based waveguides. A selection of recent representative device demonstrations is presented, including high speed DFB lasers, ultra-dense comb lasers, short (850nm) and long (2.3μm) wavelength lasers, wide-band LEDs, monolithic O-band lasers and micro-disk lasers operating in the visible. The challenges and opportunities of these approaches are discussed.

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Error-Free 56 Gb/s NRZ Modulation of a 1530-nm VCSEL Link

Cited by 29 publications

References 22 publications

43 Gb/s NRZ-OOK Direct Modulation of a Heterogeneously Integrated InP/Si DFB Laser

43 Gb/s NRZ-OOK Direct Modulation of a Heterogeneously Integrated InP/Si DFB Laser

Вертикально-излучающие лазеры спектрального диапазона 1.55 mum, сформированные методом спекания

Novel Light Source Integration Approaches for Silicon Photonics

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