Error-Aware Design Procedure to Implement Hardware-Efficient Logarithmic Circuits

Loukrakpam, Merin; Choudhury, Madhuchhanda

doi:10.1109/tcsii.2020.2979937

Cited by 5 publications

(1 citation statement)

References 15 publications

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“…Thus, primitive logic gates are made by utilizing diodes and resistors. While transistors, the other major type of nonlinear devices, make up the majority of devices in digital logic, diodes are indispensable, e.g., to protect chips from electrostatic discharge (ESD), , to bridge electronics with optics (as photodetectors) − and in analog circuits to perform logarithmic operation. − These applications not only ensure proper working conditions for the digital circuitry but also extend capability of the chip as mixed-signal circuits, and further as photonic-interconnected chips, leading to futuristic more-than-Moore integrated circuits (ICs) …”

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping

Zhang,

Sun,

Wei

et al. 2024

ACS Nano

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Diodes based on p−n junctions are fundamental building blocks for numerous circuits, including rectifiers, photovoltaic cells, light-emitting diodes (LEDs), and photodetectors. However, conventional doping techniques to form por n-type semiconductors introduce impurities that lead to Coulomb scattering. When it comes to low-dimensional materials, controllable and stable doping is challenging due to the feature of atomic thickness. Here, by selectively depositing dielectric layers of Y 2 O 3 and AlN, direct formation of waferscale carbon-nanotube (CNT) diodes are demonstrated with high yield and spatial controllability. It is found that the oxygen interstitials in Y 2 O 3 , and the oxygen vacancy together with Al− Al bond in AlN/Y 2 O 3 electrostatically modulate the intrinsic CNTs channel, which leads to p-and n-type conductance, respectively. These CNTs diodes exhibit a high rectification ratio (>10 4 ) and gate-tunable rectification behavior. Based on these results, we demonstrate the applicability of the diodes in electrostatic discharge (ESD) protection and photodetection.

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