2016
DOI: 10.1038/srep27047
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Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

Abstract: Scientific Reports 6: Article number: 22440; Published online: 01 March 2016; Updated: 02 June 2016 The following statement has been omitted from the ‘Additional Information’ section of the HTML version of this Article: “Data Availability: The images and spectra on which this paper is based may be publicly accessed and are stored at 10.

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“…As for graphene, defects could be introduced naturally or intentionally while growing. The existence of these defects also attract wide interest [32,33]. In the experiment, strain could be measured and detected by atomic force microscopy.…”
Section: Introductionmentioning
confidence: 99%
“…As for graphene, defects could be introduced naturally or intentionally while growing. The existence of these defects also attract wide interest [32,33]. In the experiment, strain could be measured and detected by atomic force microscopy.…”
Section: Introductionmentioning
confidence: 99%