Erratum: “Strain- and kinetically induced suppression of phase separation in MBE-grown metastable and unstable GaInAsSb quaternary alloys for mid-infrared optoelectronics” [J. Vac. Sci. Technol. B 31, 03C125 (2013)]

Broadband 2.4μm superluminescent GaInAsSb/AlGaAsSb quantum well diodes for optical sensing of biomolecules

“…20,21 It has been shown that metastable and unstable GaInAsSb quaternary alloys can be grown under non-equilibrium conditions in MBE by employing low growth temperatures to limit adatom diffusion, and strain to suppress phase separation and improve material quality. 22,23 Figure 2(a) shows an optical interferometric image (Wyko NT1100 optical profiling system, 2 nm vertical resolution) of the surface of a bare quantum well sample consisting of one 14 nm/ 20 nm Ga 0.58 In 0.42 As 0.14 Sb 0.86 / Al 0.25 Ga 0.75 As 0.02 Sb 0.98 quantum well with 100 nm Al 0.50 Ga 0.50 As 0.04 Sb 0.96 clads plus a 5 nm GaSb cap grown at 450 C. The surface has a smooth surface with a low density of small defects. If the growth temperature was increased to 475 C, the density of the small defects increased approximately 100 fold.…”

Superluminescence diodes at 2.4 microns from GaInAsSb/AlGaAsSb quantum well heterostructures for optical glucose sensing

“…However, it has been shown that metastable and unstable GaInAsSb quaternary alloys can be grown under nonequalibrium conditions of MBE by employing low growth temperatures to limit adatom diffusion length as well as strain to suppress phase separation. 15,16 Further it has been observed for GaInAsSb that single layers can be grown up to twelve times thicker than Matthew-Blakeslee critical thickness for an isotropic single layer without any observable relaxation, and that increasing strain improves material quality. 16 Also, growing thick, lattice matched cap layers can increase the critical thickness by a factor of two.…”

“…15,16 Further it has been observed for GaInAsSb that single layers can be grown up to twelve times thicker than Matthew-Blakeslee critical thickness for an isotropic single layer without any observable relaxation, and that increasing strain improves material quality. 16 Also, growing thick, lattice matched cap layers can increase the critical thickness by a factor of two. 17 were determined in separate growths.…”