Erratum: “Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)∕(2×4)” [J. Chem. Phys. 119, 6719 (2003)]

Hale, Michael; Yi, Seho; Sexton, Jonathan Z.; Kummel, Andrew C.; Passlack, M.

doi:10.1063/1.2748759

Cited by 32 publications

(49 citation statements)

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“…reported by Hale et al 7 in 2003. In that work, it was argued that the Fermi energy pining was due to the Ga atom which was in the second top layer and bonded to two oxygen atoms.…”

Section: Electronic Structures For Gaas"001…-␤2"2 ؋ 4… Surface Oxidationmentioning

confidence: 84%

“…Nevertheless, the structure with O row shown in Fig. 6͑3b͒ indicates the O 2 adsorption site according to the scanning tunneling microscope ͑STM͒ study by Hale et al, 7 so it was studied to verify the Fermi energy pinning mechanism, which is shown in Sec. III B 2.…”

Section: Atomic Structures For Gaas"001…-␤2"2 ؋ 4… Surface Oxidationmentioning

confidence: 99%

“…6 The oxidation and passivation of a GaAs͑001͒ surface are important issues of GaAs-based MOSFETS, thus of great interest to researchers. Previous work [7][8][9] studied diverse surface oxidation models, including SiO adsorption and the replacement of As dimer atoms by two oxygen atoms on GaAs͑001͒ surface. Their results showed that a possible mechanism of Fermi level pinning is not due to the intrinsic properties of GaAs͑001͒ surface, but due to the specific bonding geometries resulting from the oxidation.…”

Section: Introductionmentioning

confidence: 99%

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First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO

Wang

Lee

Huang

et al. 2010

Journal of Applied Physics

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The interactions of oxygen atoms on the GaAs(001)-β2(2×4) surface and the passivation of oxidized GaAs(001)-β2(2×4) surface were studied by density functional theory. The results indicate that oxygen atoms adsorbed at back-bond sites satisfy the bond saturation conditions and do not induce surface gap states. However, due to the oxygen replacement of an As dimer atom at a trough site or row site, the As–As bond is broken, and gap states are produced leading to the Fermi level pinning because of unsaturated As dangling bonds. Atomic H, Cl, S, F, and the molecular species GaO were examined to passivate the unsaturated As dangling bond. The results show that H, Cl, F, and GaO can remove such gap states. It is also found that the interaction of S with the unsaturated As dangling bond does not remove the gap states, and new gap states are generated upon single S adsorption. A higher S coverage forms S–S dimer pairs which passivate two unsaturated As atoms, and removes the As-induced gap states.

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“…reported by Hale et al 7 in 2003. In that work, it was argued that the Fermi energy pining was due to the Ga atom which was in the second top layer and bonded to two oxygen atoms.…”

Section: Electronic Structures For Gaas"001…-␤2"2 ؋ 4… Surface Oxidationmentioning

confidence: 84%

Section: Atomic Structures For Gaas"001…-␤2"2 ؋ 4… Surface Oxidationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO

Wang

Lee

Huang

et al. 2010

Journal of Applied Physics

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“…Recent studies have indicated that the disruption of As-O bonding at the dielectric/GaAs interface results in an unpinned interface. 1 Revisiting earlier works on Si passivation of GaAs surfaces ͑see, for example, Refs. 2 and 3͒, recent reports of Si deposition on GaAs for surface passivation in conjunction with high-k dielectrics ͑for example, Refs.…”

mentioning

confidence: 99%

Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

Hinkle

Sonnet

Vogel

et al. 2007

Applied Physics Letters

101

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The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion. In situ deposition and analysis techniques were used to study different surface preparations, including NH 4 OH, Si-flux, and atomic hydrogen exposures, as well as Si passivation depositions prior to in situ atomic layer deposition of Al 2 O 3 . As-O bonding was removed and a bond conversion process with Si deposition is observed. The accumulation capacitance frequency dispersion was removed only when a Si interlayer and a specific surface clean were combined. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2801512͔GaAs has once again attracted attention as an alternative substrate for metal oxide semiconductor ͑MOS͒ technologies. The advantages of GaAs over silicon are well-known, mainly having a higher electron mobility and breakdown voltage as well as a direct band gap suggesting GaAs for a wide range of devices. The elimination of anomalous frequency dispersion of the accumulation capacitance of GaAs MOS devices is a major motivation behind surface and interface treatment studies. Previous reports have attributed this dispersion, viz., the reduction of maximum capacitance with increasing measurement frequency, to a high density of interface states which results in Fermi-level pinning. Recent studies have indicated that the disruption of As-O bonding at the dielectric/GaAs interface results in an unpinned interface. 1 Revisiting earlier works on Si passivation of GaAs surfaces ͑see, for example, Refs. 2 and 3͒, recent reports of Si deposition on GaAs for surface passivation in conjunction with high-k dielectrics ͑for example, Refs. 4 and 5͒, have stimulated this study using in situ deposition and analysis methods. In this letter, in situ analysis techniques are used to correlate differences in electrical characteristics caused by different surface treatments employed on the technologically relevant n-type GaAs surface for use in enhancement mode transistors.The samples used in this work were n-type Si-doped GaAs wafers with a doping concentration of 5 ϫ 10 17 cm −3 . One set of samples was degreased in acetone, methanol, and isopropyl alcohol for 1 min each, followed by a 3 min etch in 29% NH 4 OH, 6 and dried with N 2 , while another set was prepared, in situ with no chemical treatment, using a hydrogen cracker source ͑cell temperature of 1400°C, P H 2 =1 ϫ 10 −6 mbar͒ producing atomic H with a substrate temperature of 430°C for 30 min. 7,8 Silicon of various thicknesses was deposited at room temperature on treated GaAs by e-beam evaporation ͑deposition rate= 18-132 Å / min in a multitechnique deposition/characterization system ͑base pressure= 2 ϫ 10 −11 mbar͒. 9 MOS capacitors were made using such treated surfaces followed by atomic layer deposition ͑ALD͒ of 10 nm of Al 2 O 3 using trimethylaluminum ͑TMA͒ and H 2 O at 300°C in an adjacent chamber and ex situ, rf sputtered TaN as the gat...

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“…A study examining the initial stages of Ga 2 O 3 deposition on GaAs using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) has been used to create a model showing the chemisorption sites of the initial Ga 2 O molecules [11]. Fig.…”

Section: Oxide/semiconductor Interfacementioning

confidence: 99%

Development of GaAs-based MOSFET using molecular beam epitaxy

Droopad¹,

Rajagopalan²,

Abrokwah³

et al. 2007

Journal of Crystal Growth

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Erratum: “Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)∕(2×4)” [J. Chem. Phys. 119, 6719 (2003)]

Cited by 32 publications

References 1 publication

First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO

First-principles study of GaAs(001)-β2(2×4) surface oxidation and passivation with H, Cl, S, F, and GaO

Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

Development of GaAs-based MOSFET using molecular beam epitaxy

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