Collimation of the electron beam injected by a point contact in a two-dimensional electron gas is demonstrated using a geometry with two opposite point contacts äs injector and collector. The collimation is maintained over a distance of at least 4 //m, and is destroyed by a small magnetic field. The inferred collimation factor scales linearly with the point-contact resistance, äs predicted by the semiclassical theory.Recently, Wharam et al.' reported on the nonadditivity of the series resistance of two opposite quantum point contacts in a two-dimensional electron gas (2D EG). This phenomenon was later discussed by Beenakker and van Houten 2 in terms of collimation of the electron beam injected by a point contact. In addition, Baranger and Stone 3 argued that such collimation effects are responsible for the quenching of the Hall resistance in very narrow channels. 4 Experimental support for this explanation was given by Chang, Chang, and Baranger.
5Neither a series resistance nor a Hall resistance measurement gives direct Information on the degree of collimation. In view of the importance of collimation for transport in small structures, we have decided to study this effect directly, using two opposite point contacts äs injector and collector of an electron beam with an adjustable degree of collimation. We will show that these collimation effects can be well understood using a semiclassical Simulation of the transport through the device.For sample fabrication, we employ electron-beam lithography in a polymethylmethacrylate double-layer resist (using a Philips EBPG-4 Beamwriter) and lift-off techniques to deposit gold gates on top of a previously fabricated Hall-bar structure. We have fabricated two different types of microdevices on a GaAs/(Al,Ga)As heterojunction wafer with a 2D EG mobility of about 100 m 2 V ~~' s ~'. Both devices consist of a narrow channel of 18 /im length and a width of l /im in one case and 4 /im in the other. On both sides of the channel two point contacts are defined, with 3-μπι Separation. A schematic layout of the gates and contacts is given in Fig. l (a). Resistance measurements on these samples are made using phasesensitive techniques. The samples are kept at 1.8 K in a cryostat equipped with a superconducting magnet.The relevant quantity regarding the degree of collimation in our devices is the increase in Γ,-. 0 the transmission probability for electrons to travel directly from one point contact, the injector /, to the opposite point contact, the collector c. From the semiclassical analysis given in
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