Erratum: Optical spectroscopy and the nature of the insulating state of rare-earth nickelates [Phys. Rev. B 
<b>92</b>
, 155145 (2015)]

Ruppen, J.; Teyssier, J.; Peil, Oleg E.; Catalano, Sara; Gibert, Marta; Mravlje, Jernej; Triscone, J.‐M.; Georges, Antoine; Marel, D. van der

doi:10.1103/physrevb.95.239903

Cited by 4 publications

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“…These are infrared-active phonons [ 8 ] with strong temperature dependence. In particular, the maximum reflectivity at the 700 cm -1 phonon decreases from 0.75 to 0.6 when increasing the temperature from 10 to 295 K. SmNiO3, including the free-carrier contribution and the low-frequency tail of the insulating and charge-order gaps [9]. Our optical spectra agree very well with earlier data on SmNiO3/LaAlO3 [9,10 ].…”

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confidence: 89%

“…In particular, the maximum reflectivity at the 700 cm -1 phonon decreases from 0.75 to 0.6 when increasing the temperature from 10 to 295 K. SmNiO3, including the free-carrier contribution and the low-frequency tail of the insulating and charge-order gaps [9]. Our optical spectra agree very well with earlier data on SmNiO3/LaAlO3 [9,10 ]. The insulator-metal transition temperature for our SmNiO3/LaAlO3 sample is 370 K from the four-probe resistivity measurement, and the antiferromagnetic ordering temperature is 200 K revealed by resonant X-ray diffraction ( Fig.…”

mentioning

confidence: 99%

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Broadband terahertz spectroscopy of the insulator-metal transition driven by coherent lattice deformation at theSmNiO3/LaAlO3interface

Catalano

Gibert

et al. 2016

Phys. Rev. B

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We investigate the non-equilibrium insulator-metal transition driven in a SmNiO3 thin film by coherent optical excitation of the LaAlO3 substrate lattice. By probing the transient optical properties over a broad frequency range (100 -800 cm -1 ), we analyze both the time dependent metallic plasma and the infrared optical phonon line shapes. We show that the light-induced metallic phase in SmNiO3 has the same carrier density as the equilibrium metallic phase. We also report that the LaAlO3 substrate acts as a transducer only at the earlier time delays, as the vibrations are driven coherently. No long-lived structural rearrangement takes place in the substrate. Finally, we show that the transient insulator-metal transition occurs both below and above the Néel temperature. We conclude that the supersonic melting of magnetic order measured with ultrafast x-rays is not the driving force of the formation of the metallic phase. We posit that the insulator metal transition may origin from the rearrangement of ordered charges at the interface propagating into the film.

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confidence: 89%

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confidence: 99%

Broadband terahertz spectroscopy of the insulator-metal transition driven by coherent lattice deformation at theSmNiO3/LaAlO3interface

Catalano

Gibert

et al. 2016

Phys. Rev. B

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“…The films' microstructure described so far allows establishing some correlations with the resistivity measurements. As shown in previous studies, the electrical transport of RNO films is influenced by the mismatch [13,17], orientation [14,38] and symmetry [39] of the chosen substrate, and by the film thickness [17] and termination [35,40]. All of these parameters play a role on the stabilization of the Ni-O-Ni bond angles and lengths and therefore on the intrinsic RNO electronic configuration [8,9,20].…”

Section: Rnomentioning

confidence: 94%

Defect landscape and electrical properties in solution-derived LaNiO3 and NdNiO3 epitaxial thin films

Mundet

Jareño

Gàzquez

et al. 2018

Phys. Rev. Materials

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In this work we evaluate the defects and the associated distortions present in tensile and compressive-strained chemical solution deposition (CSD) derived NdNiO 3 (NNO) and LaNiO 3 (LNO) thin-films by means of aberration corrected Scanning Transmission ElectronMicroscopy (STEM). We elucidate a fundamental link between strain and the most common defect observed in Nickelate films, the Ruddlesden-Popper fault (RPF), which will ultimately impinge on the electrical properties of the films. Overall, the concentration of RPFs defects increases with the lattice mismatch. More specifically, LNO films are always metallic, although transitioning from compressive to tensile strain results in the appearance of RPFs and an increase of the resistivity. On the other hand, NNO films always behave as insulators under tensile strain, whereas under compressive strain the increase of the thickness makes the onset of the metal-to-insulator transition (MIT) to shift to higher temperatures. I.

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“…In RNiO 3 (R=Rare Earth≠La), the nature of T IM transition is the result of the combined effect of the Mott band approach and bond disproportion associated with disproportionated sites. [52] The 20 K behavior of the low temperature white line peak and the stronger anomaly at 300 K may then be seen as an alternative for mapping the pressure phase diagram of SmNiO 3 . Consequent to an unresolved absorber and octahedral contraction it converges into P-T points identified as those at which the insulator to metal transition phase transition takes place.…”

Section: (B) Inset)mentioning

confidence: 99%

“…This can be upset by applying pressure broadening the states, reducing ion bond distance, and thus increasing hybridization. In RNiO 3 (R=Rare Earth≠La), the nature of T IM transition is the result of the combined effect of the Mott band approach and bond disproportion associated with disproportionated sites [52].…”

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confidence: 99%

Temperature and high-pressure dependent x-ray absorption of SmNiO₃at the Ni K and Sm L₃edges

Massa

Ramos

Tolentino

et al. 2015

Mater. Res. Express

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We report on XANES and EXAFS measurements of SmNiO 3 from 20 K to 600 K and up to 38 GPa at the Ni K-and Sm L 3 -edges. A multiple component pre-Ni K-edge tail is understood originating from 1s transitions to 3d-4p states while a post-edge shoulder increases distinctively smooth, at about the insulator to metal phase transition (T IM ), due to the reduction of electron-phonon interactions as the Ni 3d and O 2p band overlap triggers the metallic phase. This effect is concomitant with pressure induced Ni-O-Ni angle increments toward more symmetric Ni 3+ octahedra of the rhombohedral R¯3c space group. Room temperature pressure dependent Ni white line peak energies have an abrupt ~3.10±0.04 GPa Pa valence discontinuity from non-equivalent Ni 3+δ + Ni 3-δ charge disproportionate net unresolved absorber turning at ~T IM into Ni 3+ of the orthorhombic Pbnm metal oxide phase. At 20 K the overall white line response, still distinctive at T IM ~8.1±0.6 GPa is much smoother due to localization. Octahedral bond contraction up to 38 GPa and at 300 K and 20 K show breaks in its monotonic increase at the different structural changes. The Sm L 3 -edge does not show distinctive behaviors either at 300 K or 20 K up about 35 GPa but the perovskite Sm cage, coordinated to eight oxygen atoms, undergoes strong uneven bond contractions at intermediate pressures where we found coexistence of octahedral and rhombohedral superexchange angle distortions. We found that the white line pressure dependent anomaly may be used as an accurate alternative for delineating pressure-temperature phase diagrams. Pacs number(s): X-ray absorption spectra--78.70.Dm High-pressure effects in solids and liquids--62.50.-p; Crystallographic aspects of phase transformations--61.50.Ks (Pressure treatment--81.40.Vw) Metal-insulator transitions and other electronic transitions--71.30.+h; Strongly correlated electron systems--71.27.+a

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Erratum: Optical spectroscopy and the nature of the insulating state of rare-earth nickelates [Phys. Rev. B 92 , 155145 (2015)]

Abstract: In Table I of Appendix A the strain value of the NdNiO 3 /NdGaO 3 film-substrate combinations (top two lines) should be 1.5% (see Ref. [23]) instead of 1.1%.

Cited by 4 publications

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Broadband terahertz spectroscopy of the insulator-metal transition driven by coherent lattice deformation at theSmNiO3/LaAlO3interface

Broadband terahertz spectroscopy of the insulator-metal transition driven by coherent lattice deformation at theSmNiO3/LaAlO3interface

Defect landscape and electrical properties in solution-derived LaNiO3 and NdNiO3 epitaxial thin films

Temperature and high-pressure dependent x-ray absorption of SmNiO₃at the Ni K and Sm L₃edges

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Erratum: Optical spectroscopy and the nature of the insulating state of rare-earth nickelates [Phys. Rev. B 92 , 155145 (2015)]

Abstract: In Table I of Appendix A the strain value of the NdNiO 3 /NdGaO 3 film-substrate combinations (top two lines) should be *1.5%* (see Ref. [23]) instead of *1.1%*.

Cited by 4 publications

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Broadband terahertz spectroscopy of the insulator-metal transition driven by coherent lattice deformation at theSmNiO3/LaAlO3interface

Broadband terahertz spectroscopy of the insulator-metal transition driven by coherent lattice deformation at theSmNiO3/LaAlO3interface

Defect landscape and electrical properties in solution-derived LaNiO3 and NdNiO3 epitaxial thin films

Temperature and high-pressure dependent x-ray absorption of SmNiO3at the Ni K and Sm L3edges

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Abstract: In Table I of Appendix A the strain value of the NdNiO 3 /NdGaO 3 film-substrate combinations (top two lines) should be 1.5% (see Ref. [23]) instead of 1.1%.

Temperature and high-pressure dependent x-ray absorption of SmNiO₃at the Ni K and Sm L₃edges