Erratum: Occupied and unoccupied electronic band structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">WSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>[Phys. Rev. B<b>55</b>, 10 400 (1997)]

Finteis, Th.; Hengsberger, Matthias; Straub, Th.; Fauth, K.; Claessen, R.; Auer, P.; Steiner, P.; Hüfner, S.; Blaha, Peter; Vogt, Malte R.; Lux‐Steiner, M.; Bücher, E.

doi:10.1103/physrevb.59.2461

Cited by 18 publications

(10 citation statements)

References 2 publications

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“…The computed band gaps, IPs, and EAs are reported in Table . These are in good agreement with previous estimations and with experimental values. − The IP is used to align the band structure of both materials against the vacuum level, providing a first estimation of the band discontinuity at the interface. Figure a and b reveal a staggered gap (type II heterojunction) at the WS 2 /WSe 2 interface.…”

Section: Resultssupporting

confidence: 85%

Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

et al. 2021

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We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400 °C CMOS-compatible temperature. Illustratively, we define a multilayer quantum well geometry through successive in situ growths, leading to WSe2 being encapsulated into WS2 layers. The structural constitution of the quantum well geometry is confirmed by Raman spectroscopy combined with transmission electron microscopy. The large-scale high homogeneity of the resulting 2D van der Waals heterostructure is also validated by macro- and microscale Raman mappings. We illustrate the benefit of this integrative in situ approach by showing the structural preservation of even the most fragile 2D layers once encapsulated in a van der Waals heterostructure. Finally, we fabricate a vertical tunneling device based on these large-scale layers and discuss the clear signature of electronic transport controlled by the quantum well configuration with ab initio calculations in support. The flexibility of this direct growth approach, with multilayer stacks being built in a single run, allows for the definition of complex 2D heterostructures barely accessible with usual exfoliation or transfer techniques of 2D materials. Reminiscent of the III–V semiconductors’ successful exploitation, our approach unlocks virtually infinite combinations of large 2D material families in any complex van der Waals heterostructure design.

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Section: Resultssupporting

confidence: 85%

Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

et al. 2021

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Section: Resultsmentioning

confidence: 47%

“…Including the standard errors in fitting, the above equation can be best represented as E g = (1.02 ± 0.02)eV + (0.84 ± 0.15)eV exp(−N/(3.20 ± 0.64)). It is also worth noting that the extracted transport gaps as determined in the present study are in general smaller than those inferred from optical experiments,[16][17][18][19]46,47 a curious observation that deserves a more detailed comparison between electrical and optical data analysis.CONCLUSIONSIn conclusion, we have experimentally demonstrated ionic liquid gated Schottky barrier FETs on WSe 2 from various flake thicknesses. Excellent device characteristics with steep inverse subthreshold slopes close to the thermal limit of 60 mV/dec at room temperature have been obtained.…”

mentioning

confidence: 63%

Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe₂ Schottky Barrier Transistors

Prakash

Appenzeller

2017

ACS Nano

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Through the careful study of ionic liquid gated WSe Schottky barrier field-effect transistors as a function of flake thickness-referred to in the following as body thickness, t-critical insights into the electrical properties of WSe are gained. One finding is that the inverse subthreshold slope shows a clear dependence on body thickness, i.e., an approximate square root dependent increase with t, that provides evidence that injection into the WSe channel is mediated by thermally assisted tunneling through the gate-controlled Schottky barriers at the source and drain. By employing our Schottky barrier model, a detailed experimental plot of the WSe bandgap as a function of body thickness is obtained. We will discuss why the analysis employed here is critically dependent on the use of the above-mentioned ionic liquid gate and how device characteristics are analyzed in detail.

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“…The photoemission spectra show that the top of the valence band of WSe 2 is characterized by an intense band that has a maximum at the Γ point 1.25 ± 0.1 eV of binding energy and then on its way toward the K point separates into two sub-bands that reach a maximum in K, at a BE of 0.85 ± 0.1 eV and 1.35 ± 0.1 eV, respectively as determined by fit of the single valence band spectra (see Figure b and Figure c). Interestingly, we observe a rather large splitting of the two spin polarized bands at the K point, which is 0.50 ± 0.10 eV and is slightly larger than the value observed for the bulk material. , The effective mass of electrons in the two spin polarized bands was determined to be 0.40 ± 0.2 m e and 0.70 ± 0.2 m e in the upper and lower band, respectively (see Figure S5), which are suitable values for the development of spintronics devices.…”

Section: Results and Discussionmentioning

confidence: 73%

“…When bilayer WSe 2 is formed on EG, regardless of the number of the layers of the support, we can observe the expected change in the band structure that is typical of many TMDCs. , The K and the Γ point are almost at the same energy, which is 1.30 ± 0.1 eV, below the Fermi energy. Moreover, at the Γ point a new band is observed, which is located at a BE of 1.95 eV (see Figure a–c).…”

Section: Results and Discussionmentioning

confidence: 80%

Unraveling the Structural and Electronic Properties at the WSe₂–Graphene Interface for a Rational Design of van der Waals Heterostructures

Agnoli

Ambrosetti

Menteş

et al. 2018

ACS Appl. Nano Mater.

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WSe2 thin films grown by chemical vapor deposition on graphene on SiC(0001) are investigated using photoelectron spectromicroscopy and electron diffraction. By tuning of the growth conditions, micrometer-sized single or multilayer WSe2 crystalline islands preferentially aligned with the main crystallographic directions of the substrate are obtained. Our experiments suggest that the WSe2 islands nucleate from defective WSe x seeds embedded in the support. We explore the electronic properties of prototypical van der Waals heterostructures by performing μ-angle resolved photoemission spectroscopy on WSe2 islands of varying thickness (mono- and bilayer) supported on single layer, bilayer, and trilayer graphene. The experiments are substantiated by DFT calculations indicating that the interaction between WSe2 and graphene is weak and the electronic properties of the resulting heterostructures are unaffected by the thickness of the supporting graphene layer or by the crystallographic orientation. Yet the WSe2–graphene distance and the WSe2/WSe2 interlayer separation strongly influence the electronic band alignment at the high symmetry points of the Brillouin zone. The values of technology relevant quantities such as splitting of spin polarized bands and effective mass of electrons at band valleys are extracted from experimental angle resolved spectra. These findings establish further strategies for tuning the morphology and electronic properties of artificially fabricated van der Waals heterostructures that may be used in the fields of nanoelectronics and valleytronics.

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Erratum: Occupied and unoccupied electronic band structure ofWSe2[Phys. Rev. B55, 10 400 (1997)]

Cited by 18 publications

References 2 publications

Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe₂ Schottky Barrier Transistors

Unraveling the Structural and Electronic Properties at the WSe₂–Graphene Interface for a Rational Design of van der Waals Heterostructures

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Erratum: Occupied and unoccupied electronic band structure ofWSe2[Phys. Rev. B55, 10 400 (1997)]

Cited by 18 publications

References 2 publications

Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe2 Schottky Barrier Transistors

Unraveling the Structural and Electronic Properties at the WSe2–Graphene Interface for a Rational Design of van der Waals Heterostructures

Contact Info

Product

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About

Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe₂ Schottky Barrier Transistors

Unraveling the Structural and Electronic Properties at the WSe₂–Graphene Interface for a Rational Design of van der Waals Heterostructures