Erratum: “Modeling the optical constants of HgxCd1−xTe alloys in the 1.5–6.0 eV range” [J. Appl. Phys. <b>85</b>, 2854 (1999)]

Djurišić, Aleksandra B.; Li, E. Herbert

doi:10.1063/1.371526

Cited by 9 publications

(20 citation statements)

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“…Several modifications of the MDF for zinc-blende 52-55 and hexagonal 56,57 semiconductors have been proposed. Several modifications of the MDF for zinc-blende 52-55 and hexagonal 56,57 semiconductors have been proposed.…”

Section: ͑3͒mentioning

confidence: 99%

“…It has been shown that the agreement with the experimental data for GaN can be improved by using the modified MDF with adjustable broadening. 57 However, there exists an important problem in the application of this model. 57 However, there exists an important problem in the application of this model.…”

Section: ͑3͒mentioning

confidence: 99%

“…effect 32,55,57,[63][64][65] The Lorentzian function has wide wings, which give rise to the excessive absorption below the band gap. Simple Lorentzian broadening, which is frequently used, does not represent accurate approximation of the lifetime broadening.…”

Section: Adjustable Broadening Concept and Modified Critical Pointmentioning

confidence: 99%

“…63 However, if a Gaussian broadening is assumed, the dielectric function cannot be expressed in a closed analytical form. 56,57 In this work, we will model the optical functions of GaN with the modified DHO model with adjustable broadening ͑MDHO͒ and modified MDF with adjustable broadening ͑MMDF͒. But it should be pointed out that this model gives excellent approximation of both the dielectric function and its first three derivatives.…”

Section: Adjustable Broadening Concept and Modified Critical Pointmentioning

confidence: 99%

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Dielectric function models for describing the optical properties of hexagonal GaN

Djurišić¹,

Li²

2001

Journal of Applied Physics

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Articles you may be interested inTemperature dependent dielectric function and the E 0 critical points of hexagonal GaN from 30 to 690 K AIP Advances 4, 027124 (2014); 10.1063/1.4867094Optical constants of cubic GaN/GaAs(001): Experiment and modeling Several different models have been employed for modeling the dielectric function of hexagonal GaN in the range from 1 to 10 eV. Models are compared in terms of number of parameters required, intricacy of model equations, and possibility of accurate estimation of important physical parameters, such as energies of critical points and exciton binding energies. Shortcomings and advantages of each model are discussed in detail. Excellent agreement with the experimental data for GaN has been achieved with three of the investigated models. It has also been shown that an assumption of adjustable broadening instead of a purely Lorentzian one improves the agreement with the experimental data and enables elimination of excessive absorption below the gap which is inherent to the models with Lorentzian broadening.

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Section: ͑3͒mentioning

confidence: 99%

Section: ͑3͒mentioning

confidence: 99%

Section: Adjustable Broadening Concept and Modified Critical Pointmentioning

confidence: 99%

Section: Adjustable Broadening Concept and Modified Critical Pointmentioning

confidence: 99%

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Dielectric function models for describing the optical properties of hexagonal GaN

Djurišić¹,

Li²

2001

Journal of Applied Physics

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“…ion inter-diffusion at the interface following ion implantation (Viňa et al 1984;Gering et al 1987;Herrmann et al 1993a;Mao et al 1998;Huang et al 2000;Djurisic and Li 1999;Djurisic et al 2002).…”

Section: Other Expressions For the Intrinsic Absorption Coefficientmentioning

confidence: 99%

Optical Properties

Physics and Properties of Narrow Gap Semiconductors

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Structural and Synthetic Modification of Graphitic Foams and Dendritic Graphitic Foams for Thermal Management

Jia

Liu

Fan

et al. 2021

Physica Status Solidi (a)

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Porous graphitic foam structures have been explored for applications ranging from electrochemical energy storage devices, [1][2][3][4] packaging and thermal interface materials, [5] reinforced polymer composites, [6] and flexible electronics. [7,8] Because of the high basal-plane thermal conductivity of graphite, porous graphitic foams have been used for thermal management, [9,10] such as providing an interconnected open cellular network to transfer heat from low-thermal conductivity phase change materials (PCMs) filled in the pore space for thermal energy storage. [11][12][13] By overcoming the high interface thermal resistance problem that limits the effective thermal conductivity ðκ e Þ of van der Waals networks of graphitic nanostructures, [11] the 3D continuous porous foam structures achieve considerably higher κ e than the van der Waals networks. Compared with highdensity carbon foams grown by other methods, [14][15][16][17] relatively low-density graphitic foam (GF) grown by chemical vapor deposition (CVD) on reticular nickel (Ni) foam templates is suitable for applications such as PCM thermal energy storage, where the graphite volume fraction (ϕ g ) needs to be controlled to provide both sufficient thermal transport enhancement and only a small reduction of the volume fraction of the energy-storing PCM.However, the thermal performance enhancement by CVD GF grown on reticular Ni foam is limited due to the relatively large pore size, which results in a large distance and resistance for heat flow from the functional materials inside the pore space to the high-thermal conductivity graphitic matrix grown on the sacrificial catalyst template. The low specific surface area associated with the large pores also limits the ϕ g and κ e . If the pore size can be reduced without altering the struct thickness and solid thermal conductivity (κ s ) of the graphite struts, the κ e of the GF is expected to increase together with an increase of the ϕ g . One approach to reducing the pore size is to use sintered Ni powder bed or Ni powder sintered in reticular Ni foam to replace the reticular Ni foam as the catalyst for CVD growth of powder-derived graphite foam (PGF) and hybrid GF-PGF (HGF) structures, respectively. [18] In another approach, carbon nanotubes (CNTs) have been grown on the strut walls of GF to fill the pore space and increase the specific surface area. [13,19] The κ e of these hybrid CNT-GF structures with ϕ g increased to 1.8% is about 2.4 times the value reported for GF with ϕ g of 0.45%. Although the obtained κ e of CNT-GF is still lower than PGF with ϕ g as high as 8%, the high specific surface provided by the additional CNTs yielded enhanced thermal performance, such as improved interfacial thermal transport and additional heterogeneous nucleation sites to suppress subcooling of composite PCMs for thermal energy storage. [13] However, the CNT-GF growth process requires two-step CVD reactions: one for GF growth on the reticular Ni foam template and the other for CNT growth with iron catalyst deposited on ...

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Erratum: “Modeling the optical constants of HgxCd1−xTe alloys in the 1.5–6.0 eV range” [J. Appl. Phys. 85, 2854 (1999)]

Cited by 9 publications

References 0 publications

Dielectric function models for describing the optical properties of hexagonal GaN

Dielectric function models for describing the optical properties of hexagonal GaN

Optical Properties

Structural and Synthetic Modification of Graphitic Foams and Dendritic Graphitic Foams for Thermal Management

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