Erratum: Livashvili et al. Appearance of a Solitary Wave Particle Concentration in Nanofluids under a Light Field. Nanomaterials 2021, 11, 1291

Abstract

The authors wish to make the following corrections to this paper [...]

First Demonstration of Vertical Sandwich GAA TFETs with Self-Aligned High-k Metal Gates and Abrupt Doping Tunneling Junctions

“…Compared to the previous works, a more challenging isotropic SiGe qALE process has been developed, which has the same selectivity for n+−Si and p+−Si to form lateral gaps for the self-aligned gates process of VSATFETs. [30][31][32][33] With the selective and isotropic qALE process, precisely defined diameter of nanowires (NWs) and thickness of nanosheets(NSs) were formed. And by using in situ doping epitaxial technology, the abrupt doping tunneling junctions were performed in this work.…”