Erratum: “Improvement of the frequency stability of the cesium fountain clock by data processing” [AIP Adv. 11(<b>12</b>), 125032 (2021)]

Li, Zhiqi; Yang, Ning; Liu, Suyan; Zhou, Wei

doi:10.1063/5.0084301

Cited by 2 publications

(3 citation statements)

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“…Since the unit cell of the SnSe single layer is composed of four atoms, there are three acoustic phonon branches and nine optical phonon branches existing in the phonon spectrum of the monolayer, as shown in Figure 2a. Unlike the GeS and SnS single layer reported in the previous work, [43] the absence of a phonon bandgap and a relatively lower maximum phonon frequency (below 200 cm À1 ) in the phonon spectrum of the SnSe monolayer can be attributed to the heavier atomic mass and weaker bond strength existing in the SnSe puckered lattice. The phonon spectrum and dynamical stability of monolayer SnSe revealed in this work agree with previous studies.…”

Section: Resultscontrasting

confidence: 67%

“…The anisotropy in phonon transport can be quantified by the ratio of calculated thermal conductivities along the zigzag and the armchair directions, and the corresponding results at 300 K are also listed in Table 1. For the SnSe monolayer, it can be observed that the anisotropy in κ is relatively weaker with a value of 1.028 at 300 K than that of SnS and GeS, [43] which can be attributed to the weaker structural anisotropy in the SnSe single layer as revealed by the close lattice constants along the armchair and zigzag directions. However, the anisotropy can be relatively enhanced by the stacked interface, as confirmed in Table 1, and ranges from 1.078 to 1.189 at 300 K determined by the stacking orders.…”

Section: Resultsmentioning

confidence: 99%

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First‐Principles Study of Lattice Thermal Conductivity in SnSe Bilayer and Trilayer

Li,

Yang

2024

Physica Status Solidi (b)

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The assembly of 2D materials via vertical stacking has shown great advantages in modern device design, while the interface formed by two 2D materials also provides a new opportunity to tune various physical properties. Herein, the impact of homogeneous stacking on the thermal conductivity of 2D SnSe, a promising thermoelectric material, has been elucidated by solving the phonon‐Boltzmann transport equation with the first‐principles approach. SnSe bilayer and trilayer stacks, involving diverse interfacial configurations, are constructed to reveal potential modulation of in‐plane lattice thermal conductivity. Compared to the single‐layer counterpart, the result demonstrates a reduced thermal transport capacity in both the SnSe bilayer and trilayer due to van der Waals interaction, and the SnSe bilayer could exhibit a greater potential for thermoelectric applications due to the significantly suppressed phonon transport. Moreover, the interface effect can be further verified by the stacking‐dependent behavior of thermal conductivity, while the reduced thermal conductivity in SnSe stacks can be attributed to the decreased phonon relaxation time caused by interlayer interactions, implying great potential to further promote 2D SnSe‐based thermoelectric applications by stacking modulation.

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Section: Resultscontrasting

confidence: 67%

Section: Resultsmentioning

confidence: 99%

First‐Principles Study of Lattice Thermal Conductivity in SnSe Bilayer and Trilayer

Li,

Yang

2024

Physica Status Solidi (b)

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“…[ 19,35–38 ] GeSe follows tin chalcogenides with several reports of ARPES [ 39,40 ] and thermoelectric properties measurements, [ 41,42 ] while for GeS only computational simulations have been published to date. [ 43–46 ] Therefore, especially for this material an experimental investigation is required to provide insight into its most fundamental properties and verify the calculations. Generally, according to both theoretical predictions and empirical studies, compared to SnSe other MXs exhibit poorer thermoelectric performance, which however does not necessarily exclude them from applications in thermoelectric devices.…”

Section: Introductionmentioning

confidence: 99%

Photoemission Study of the Thermoelectric Group IV‐VI van der Waals Crystals (GeS, SnS, and SnSe)

Tołłoczko,

Zelewski,

Ziembicki

et al. 2023

Advanced Optical Materials

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Group IV‐VI van der Waals crystals (MX, where M = Ge, Sn, and X = S, Se) are receiving increasing attention as semiconducting thermoelectric materials with nontoxic, earth‐abundant composition. Among them, SnSe is considered the most promising as it exhibits a remarkably high thermoelectric figure of merit (ZT), initially attributed to its low lattice thermal conductivity. However, it has been shown that the electronic band structure plays an equally important role in thermoelectric performance. A certain band shape, described as a “pudding mold” and characteristic for all MXs, has been predicted to significantly improve ZT by combining good electrical conductivity with high Seebeck coefficient. This subtle feature is explored experimentally for GeS, SnS, and SnSe by means of angle‐resolved photoemission spectroscopy. The technique also allows for the determination of the effective mass and Fermi level position of as‐grown undoped crystals. The findings are supported by ab initio calculations of the electronic band structure. The results greatly contribute to the general understanding of the valence band dispersion of MXs and reinforce their potential as high‐performance thermoelectric materials, additionally giving prospects for designing systems consisting of van der Waals heterostructures.

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Erratum: “Improvement of the frequency stability of the cesium fountain clock by data processing” [AIP Adv. 11(12), 125032 (2021)]

Cited by 2 publications

References 1 publication

First‐Principles Study of Lattice Thermal Conductivity in SnSe Bilayer and Trilayer

First‐Principles Study of Lattice Thermal Conductivity in SnSe Bilayer and Trilayer

Photoemission Study of the Thermoelectric Group IV‐VI van der Waals Crystals (GeS, SnS, and SnSe)

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