Erratum: Fractional quantum Hall effect in CdTe [Phys. Rev. B82, 081307(R) (2010)]

Abstract

An error of a factor of 2 is displayed on the x axis of Fig. 2(d): It should read B total = 2 × 5 = 10 T instead of B total = 5 T. In the main text, page 3, paragraph 5, the sentence "For ν = 4/3(ν * CF = 2), these crossings occur for B total ∼ 3.4 T and B total ∼ 6.8 T, respectively," should be replaced with "For ν = 4/3(ν * CF = 2), these crossings occur for B total ∼ 6.8 T and B total ∼ 13.6 T, respectively. . . ."Also, the sentence "The same conclusions are drawn for the ν = 5/3(ν * CF = 1) FQH state, provided B total > 3 T" should be replaced with "The same conclusions are drawn for the ν = 5/3(ν * CF = 1) FQH state, provided B total > 6 T." None of the interpretations and conclusions of the paper are affected by these errors.

Suppression of short‐range scattering via hydrophobic substrates and the fractional quantum Hall effect in graphene

“…We emphasize that in previous FQHE work on graphene 5, 10, 11, 21, the product of $\mu n$ > 10 16 V –1 s –1 (conductivity > 40$e^2/h),$ is exceeded by the one in our work of $\mu n$ > 2 × 10 16 V –1 s –1 at n > 1 × 10 12 cm –2 . Also, the factor $\mu n$ > 10 16 V –1 s –1 is similarly found for 2D electron gases in III–V 25, 26 VI 27–29 and transition metal–VI 30, 31 systems, as well as for two‐dimensional hole gases 32 in the FQHE regime. In all these studies $\ell/d$ is approximately the same, $\ell/d$ ≥ 10, indicating a similar EEI contribution to the overall scattering.…”

Shubnikov–de Haas oscillations in GaAs quantum wells in tilted magnetic fields

“…The associated disappearance of the odd-ν SdHO minima is referred to as a critical collapse of the exchangeenhanced spin splitting. [1][2][3][4][5] At odd ν ≫ 1, but considerably lower than ν s , the exchange energy scales with the cyclotron energy ∆ X = α X ω c , 1,6 while at even ν, one can set ∆ X ≈ 0 and ∆ s ≈ ∆ Z = α Z ω c . Since in GaAs α Z ≪ 1, α X < 1, 7 and, most importantly, since there are no critically collapsing contributions to ∆ even , the SdHO at even-ν persist to filling factors much larger than ν s .…”

“…On the other hand, one usually assumes that both the cyclotron and the exchange energies depend only on B ⊥ . 2,4,9 As a result, when the magnetic field is tilted by angle θ away from the sample normal, for any given ν, the cyclotron splitting, ∆ even ∝ 1 − α Z / cos θ, will decrease with θ and eventually approach the increasing spin splitting, ∆ odd ∝ α X + α Z / cos θ. This approach forms a basis of the coincidence method, 10 which was successfully used to study the exchange contribution.…”

Composite Fermion Theory of Exotic Fractional Quantum Hall Effect

“…Here also, the observations are consistent with CFs in the SU(2) limit, with strong FQHE at 2/3, 4/3, 2/5, 8/5, 4/7, and 4/9, and a weak FQHE at 1/3; indications are also seen for FQHE at 10/ 7, 6/5, and 4/5. The II-VI semiconductor CdTe is a single-valley, direct-gap semiconductor with a large g-factor and quantum wells, and produces single component FQHE states at fractions 4/3 and 5/3 (126). This system allows variations in the effective g-factor by doping with magnetic ions to form the so-called diluted magnetic semiconductors.…”