Erratum: Focused ion beam processes for high-T
 c superconductors [J. Vac. Sci. Technol. B 6, 900 (1988)]

Matsui, Shinji; Ochiai, Y.; Kojima, Yukio; Tsuge, H.; Takado, N.; Asakawa, K.; Matsutera, H.; Fujita, J.; Yoshitake, T.; Kubo, Yukio

doi:10.1116/1.584180

Cited by 9 publications

(13 citation statements)

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“…Thus, it is expected that a self-biasing effect is rather weak in the ECR plasma processes. In fact, Matsuoka and Ono [31] reported the self-biasing voltage less than -40 V in the gas pressure range from 1 x 10 -2 Pa to 1 x 10 -1 Pa. This fact as well as low ion energies of 10 to several tens of eV in the ECR plasma [31,32] can suppress an ion-bombardment (sputtering) effect on the material surfaces.…”

Section: Surface Passivation Processes For Algan Surfacesmentioning

confidence: 96%

Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

Hashizume

Hasegawa

2004

Applied Surface Science

177

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Effects of device processing on chemical and electronic properties of AlGaN surfaces were investigated. The X-ray photoelectron spectroscopy analysis showed serious deterioration such as stoichiometry disorder and nitrogen deficiency (N deficiency) at the AlGaN surfaces processed by high-temperature annealing, H 2 -plasma cleaning, dry etching in CH 4 /H 2 /Ar plasma and deposition of SiO 2 . This resulted in high density of surface states at the processed AlGaN surface. Furthermore, the N deficiency introduced a localized deep donor level related to N vacancy (V N ) at AlGaN surfaces. Such electronic states governed by a V N -related deep donor and surface state continuum can cause strong Fermi level pinning at the AlGaN surface, reduction of the barrier height and excess leakage currents at the AlGaN Schottky interface and serious drain current collapse in AlGaN/GaN heterostructure field effect transistors. The SiN x -or Al 2 O 3 -based passivation scheme with a combination of a remote N 2 -plasma treatment was found to be effective in suppressing formation of V N -related surface defects at AlGaN surfaces. a)

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Section: Surface Passivation Processes For Algan Surfacesmentioning

confidence: 96%

Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

Hashizume

Hasegawa

2004

Applied Surface Science

177

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“…We now discuss these results in the light of a recent series of experiments on argon ECR plasmas [13][14][15][16]. In these experiments, an ECR plasma, in the axial configuration of Fig.…”

Section: Ei~v (26)mentioning

confidence: 95%

“…Typically a beam like distribution of ions was observed downstream [13]. The ion energy within the plasma, at 40 cm from the microwave window (where B =40 G) is measured with an ion energy analyzer as a function of a number of parameters including gas pressure.…”

Section: Ei~v (26)mentioning

confidence: 99%

“…(The data in Ref. (13) are reported in Pascals, where 1 Pa = 7.6x10" 3 ton.) Also shown in the figure is the calculated ion energy.…”

Section: Ei~v (26)mentioning

confidence: 99%

“…For a typical laboratory argon plasma, the transition pressure is roughly lOAorr. This model is then applied to a recent series of experiments on ECR plasmas [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

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Plasma Acceleration by Area Expansion

Manheimer¹,

Fernsler²

2000

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Public reporting burden (or this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 12t5 Jefferson Davis Highway Suite 1204 Arlington, VA 22202-4302, and to the Office of Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.

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Electron-beam-induced deposition with carbon nanotube emitters

Dong

Arai

Fukuda

2002

Applied Physics Letters

132

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Electron-beam-induced deposition ͑EBID͒ is performed with multiwalled carbon nanotube emitters that are assembled to atomic force microscope cantilevers through nanorobotic manipulations. A typical experiment shows that under 120 V bias, field emission current 2 A occurs from a nanotube emitter. In comparison with conventional EBID with a Schottky-type electron gun of a field-emission scanning electron microscope ͑FESEM͒ in the same vacuum chamber, the deposition rate of the nanotube emitter reaches up to 12.2% of that of FESEM although the bias and the emission current are only 0.8% and 1.9% of those of FESEM ͑15 kV and 106 A͒. The concept of parallel EBID is also presented.Electron-beam-induced deposition ͑EBID͒ is caused by the dissociation of molecules adsorbed to a surface by highenergy electrons, and has been demonstrated as an additive nanolithography 1 for many applications such as etch masks, 2,3 atomic force microscope ͑AFM͒ probe tips, 4 -6 and other nanostructures. 7,8 However, low deposition rates and high cost obstacle its applications although its potential feature size can be smaller than its counterpart: focused ion beam deposition for the fabrication of 3D nanostructures. Although multiexposure electron beam 9 can improve its productivity, it provides no solution for the problem of cost because it still involves field-emission scanning electron microscope ͑FESEM͒ or similar equipments that equipped with expensive thermal electron filaments. Parallel EBID with cheaper field emitter array will be a synthetic solution for the above problem, but no work has been demonstrated so far.On the other hand, carbon nanotubes ͑CNTs͒ have been demonstrated as well-defined cold cathodes, 10 because they can emit high current density under very low bias. Although intensive work has been done on the investigation of the field emission properties of CNTs 11 and their applications in flat display, 12 there has been no demonstration yet showing the feasibility of EBID with CNT emitters. Because of the possibility to fabricate well-aligned CNT arrays, 13,14 they may also find applications in parallel EBID, which will lead to broader application of EBID.There have been some demonstrations on conventional 2D lithography by using CNT tips, 15,16 but as shown by Koops, 1 conventional lithography is not effective for the fabrication of 3D nanostructures.In this letter, we show the feasibility of EBID through individual CNT emitters, and present parallel EBID with CNT arrays as a 3D large-scale nanofabrication technique.The experiment system of CNT emitter for EBID is shown in Fig. 1, in which a CNT is mounted on an AFM cantilever and is placed above an Au-coated Si substrate. The CNT is used as cathode, while the substrate as anode. The gap L between the tip of the CNT and the substrate can be adjusted by mounting the cantilever and substrate onto unit 1 and unit 2 of the nanorobotic manipulation system 17,18 shown in Fig. 2, which also provides the possibility to generate a deposit pattern through EBID onto the substrat...

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Erratum: Focused ion beam processes for high-T c superconductors [J. Vac. Sci. Technol. B 6, 900 (1988)]

Cited by 9 publications

References 0 publications

Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

Plasma Acceleration by Area Expansion

Electron-beam-induced deposition with carbon nanotube emitters

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