Erratum: Electron paramagnetic resonance studies of silicon-related defects in diamond [Phys. Rev. B<b>77</b>, 245205 (2008)]

Edmonds, Andrew M.; Newton, Mark E.; Martineau, P. M.; Twitchen, Daniel J.; Williams, Stephanie D

doi:10.1103/physrevb.82.249901

Cited by 24 publications

(58 citation statements)

References 3 publications

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“…We first study the thermal population of the LB and the UB between 0.1 and 10 K using an ensemble of asgrown SiV − centers (Sample-A in Ref. [27]). We probe the relative populations in the LB and the UB by measuring the ensemble photoluminescence excitation (PLE) spectra of transitions C and D. Transitions C and D are both visible in PLE at 4 K, which suggests comparable thermal population in the LB and UB [ Fig.…”

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confidence: 99%

Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout

et al. 2017

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The negatively-charged silicon-vacancy (SiV − ) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date (∼ 250 ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV − electronic spin coherence by five orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV − symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV − spin with 89% fidelity. Coherent control of the SiV − spin with microwave fields is used to demonstrate a spin coherence time T2 of 13 ms and a spin relaxation time T1 exceeding 1 s at 100 mK. These results establish the SiV − as a promising solid-state candidate for the realization of quantum networks.Quantum networks require the ability to store quantum information in long-lived memories, to efficiently interface these memories with optical photons and to provide quantum nonlinearities required for deterministic quantum gate operations [1,2]. Even though key building blocks of quantum networks have been demonstrated in various systems [3,4], no solid-state platform has satisfied these requirements. Over the past decade, solid-state quantum emitters with stable spin degrees of freedom such as charged quantum dots and nitrogenvacancy (NV) centers in diamond have been investigated for the realization of quantum network nodes [5]. While quantum dots can be deterministically interfaced with optical photons [6], their quantum memory time is limited to the µs scale [7] due to interactions with their surrounding nuclear spin bath. In contrast, NV centers have an exceptionally long-lived quantum memory [8] but suffer from weak, spectrally unstable optical transitions [9]. Despite impressive proof-of-concept experimental demonstrations with these systems [10,11], scaling to a large number of nodes is limited by the challenge of identifying suitable quantum emitters with the combination of strong, homogeneous and coherent optical transitions and long-lived quantum memories.The negatively-charged silicon-vacancy (SiV − ) has recently been shown to have bright, narrowband optical transitions with a small inhomogeneous broadening [12,13]. The optical coherence of the SiV − is protected by its inversion symmetry [14], even in nanostructures [15]. These optical properties were recently used to show strong interactions between single photons and single SiV − centers and to probabilistically entangle two SiV − centers in a single nanophotonic device [16]. At 4 K, however, the SiV − spin coherence is limited to ∼ 100 ns due to coupling to the phonon bath, mediated by the spin-orbit interaction [17][18][19][20][21].In this Letter, we demonstrate high-fidelity coherent ...

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confidence: 99%

Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout

et al. 2017

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“…Details are given in Table 3. The Si-V centre has been the subject of recent detailed experimental and theoretical investigation [13,14]. The HPHT samples generally lacked NV 0 centres before irradiation or else they were present at very low levels.…”

Section: Methodsmentioning

confidence: 99%

“…The argument here is that the Fermi level in high-N samples is near the conduction band stabilising negatively charged defects. Third, the remarkable outward migration that results in the highest concentration of 3H centres well outside the irradiated region after high electron doses to insulating samples [13] may be understood by repulsion of negatively charged defects. Fourth, the recovery of 3H intensity after it has been greatly reduced by annealing by injection of electrons during SEM exposure is also consistent with a negatively charged defect.…”

Section: H Plmentioning

confidence: 98%

Annealing of electron radiation damage in a wide range of Ib and IIa diamond samples

Steeds¹,

Kohn²

2014

Diamond and Related Materials

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“…In addition, hydrogen is a very common impurity in diamond and may influence greatly the gap states associated with defects and electronic properties [22][23][24][25]. Considering the existence of NVH and SiVH complexes in N-doped and Si-doped diamond [26][27][28][29][30], H atom may bind to P and V defects to form PVH related complexes and affect the electronic properties of P-doped diamond.…”

Section: Introductionmentioning

confidence: 99%

Theoretical characterization of carrier compensation in P-doped diamond

Cui¹,

Dai²,

Guo³

et al. 2009

Applied Surface Science

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Erratum: Electron paramagnetic resonance studies of silicon-related defects in diamond [Phys. Rev. B77, 245205 (2008)]

Cited by 24 publications

References 3 publications

Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout

Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout

Annealing of electron radiation damage in a wide range of Ib and IIa diamond samples

Theoretical characterization of carrier compensation in P-doped diamond

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