Erratum: “Carrier heating and negative photoconductivity in graphene” [J. Appl. Phys. 117, 015101 (2015)]

Combining negative photoconductivity and resistive switching towards in-memory logic operations

“…In this figure, we have presented the device current at +0.2 V under the different combinations of the two inputs in sequence. The current could be found to be high under the (00) input condition implying an LRS; the current has been low, that is, the device is in an HRS, under the other three input conditions, namely (10), (01), and (11). In Fig.…”

“…Under the reversal of the bias or exposure to illumination, these com-pensated carriers are detrapped or new trap-states are generated to restore the initial energy barrier and hence the HRS. Under illumination, photogenerated trap-states have led to a higher device resistance under illumination (input: 01) and also with both inputs (11) than the resistance under only the electrical input, that is, (10).…”

“…[1][2][3] This anomalous photoconductivity was initially observed in some well-studied materials in their low-dimensional forms, such as silver and silicon nanowires, 4,5 indium nitride (InN) thin films, 6 indium arsenide (InAs) nanowires, 7 single-layered molybdenum disulfide (MoS 2 ), 1,8,9 and other few-layered 2D materials, such as graphene, platinum diselenides, and rhenium diselenides. [10][11][12][13] However, there has been no consensus regarding the mechanism of NPC in the materials. It is believed that enhanced recombination of majority carriers and/or scattering of charge carriers during the transport may be the rationale for yielding the NPC.…”

Hot carrier dynamics and electron-optical phonon coupling in photoexcited graphene via time-resolved ultrabroadband terahertz spectroscopy

“…Optical pump terahertz (THz) probe spectroscopy (OPTP) is a powerful tool for investigating the hot carrier dynamics of graphene because it probes the intraband optical conductivity dominated not only by the hot carrier distribution, but also the carrier scattering process in contrast to optical pump optical probe spectroscopy. Extensive studies using OPTP [28][29][30][31][32][33][34][35][36][37][38][39][40][41] have revealed the unusual behaviors of graphene hot carriers, which undergo positive and negative changes in the intraband optical conductivity with non-Drude type frequency dependence. The negative change observed in heavily doped graphene is an indicative of enhanced carrier scattering and reduced Drude weight in quasi-equilibrium hot carrier state with a single chemical potential owing to ultrafast recombination of photoexcited carriers.…”

“…The negative change observed in heavily doped graphene is an indicative of enhanced carrier scattering and reduced Drude weight in quasi-equilibrium hot carrier state with a single chemical potential owing to ultrafast recombination of photoexcited carriers. However, most of these works were performed by THz probe with the relatively narrow band (1-3 THz) which was not sufficient for capturing the whole spectrum of non-Drude type conductivity and their results have been interpreted using the framework of the phenomenological model 31,33,36,37,40 . Such a phenomenological analysis for the narrow band spectra is not sufficient to understand the hot carrier and phonon dynamics quantitatively and to derive the microscopic parameters.…”