Erratum: “Analysis of asymmetric giant magnetoimpedance in field-annealed Co-based amorphous ribbon” [Appl. Phys. Lett. <b>75</b>, 2114 (1999)]

Kim, Cheol Gi; Jang, Kil Jae; Kim, D. Y.; Yoon, Seok Soo

doi:10.1063/1.125853

Cited by 7 publications

(5 citation statements)

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“…8,9 For practical purposes, doped n-type ZnO is usually preferred. The low-resistivity n-type ZnO could be realized by doping with group IIIA ͓e.g., B, 10,11 Al, [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] Ga, [32][33][34] and In ͑Refs. 35 and 36͔͒, IIIB ͓e.g., Sc ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

“…Among these possible dopants, Al is the best one, popularly used in growth process resulting in high-quality, low-resistivity Al-doped ZnO ͑AZO͒ thin films. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] AZO is a key functional oxide that exhibits strong ultraviolet emission, high transparence to visible light, and high conductivity. As a transparent conducting oxide ͑TCO͒, AZO is regarded as an ideal candidate for replacing tin-doped indium oxide ͑ITO͒ and tin oxide ͑NESA͒ commercially used nowadays, [43][44][45][46] owing to its desired properties mentioned above as well as its nontoxicity, long-term environmental stability, and easier etchability.…”

Section: Introductionmentioning

confidence: 99%

“…[47][48][49][50] AZO thin films are considered naturally as an ideal n-type layer for the heterostructure device design. [51][52][53] AZO thin films could be prepared by various techniques, such as thermal evaporation, 12 magnetron sputtering, [13][14][15][16][17][18][19][20][21][22][23] chemical vapor deposition ͑CVD͒, 24 pulsed laser deposition ͑PLD͒, [25][26][27] molecular beam epitaxy ͑MBE͒, 28 sol gel, 29 and spray pyrolysis. 30,31 Regardless of the preparation method, however, almost all studies have been focused just on the low Al content region, commonly lower than 7 at.…”

Section: Introductionmentioning

confidence: 99%

“…%. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] This Al content region may be ideal for achievement of good n-type ZnO. As we already know, Al plays a crucial role in determining the properties of AZO films.…”

Section: Introductionmentioning

confidence: 99%

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Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions

Lü

Zeng

et al. 2006

Journal of Applied Physics

408

169

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͑Zn,Al͒O thin films have been prepared by a dc reactive magnetron sputtering system with the Al contents in a wide range of 0 -50 at. %. The structural, optical, and electrical properties of ͑Zn,Al͒O films were detailedly and systematically studied. The amount of Al in the film was nearly the same as, but often lower than, that in the sputtering target. The growth rate of films monotonically decreased as the Al content increased. In a low Al content region ͑Ͻ10 at. % ͒, Al-doped ZnO ͑AZO͒ thin films could be obtained at 400°C in an Ar-O 2 ambient with good properties. The optimal results of n-type AZO films were obtained at an Al content of 4 at. %, with low resistivity ϳ10 −4 ⍀ cm, high transmittance ϳ90% in the visible region, and acceptable crystal quality with a high c-axis orientation. The band gap could be widened to 3.52 eV at 4 at. % Al due to the Burstein-Moss shift ͓E. Burstein, Phys. Rev. 93, 632 ͑1954͔͒ modulated by many-body effects. An appropriate Al-doping concentration served effectively to release the residual, compressive stress in film, which may be the reason for the improvement in film stability and the increment in grain size as well. In a medium Al content region ͑10-30 at. % ͒, however, the film quality was degraded, which was presumably due to the formation of clusters or precipitates in the grains and boundaries. Besides the ͑002͒ plane, other diffraction peaks such as ͑100͒ and ͑101͒ planes of ZnO were observed, but the ͑Zn,Al͒O films still exhibited a single-phase wurtzite ZnO structure. An intragrain cluster scattering mechanism was proposed to interpret the reduction of carrier mobility in films with the Al contents in the 7 -20 at. % region. The solubility limit of Al in ZnO film was identified to be in the 20-30 at. % range, much higher than the thermodynamic solubility limit of 2 -3 at. % in ZnO. In a high Al content region ͑ജ30 at. % ͒, there were distinct observations for ͑Zn,Al͒O films. As the Al content was 30 at. %, the film appeared in a two-phase nature with ZnO hexagonal and Al 2 O 3 rhombohedral structures. At the 50 at. % Al content, the matrix of the ͑Zn,Al͒O film was Al 2 O 3 , and no evident trace of wurtzite ZnO was observed. The electrical and optical properties for both cases were also very different from those at the Al contents below 30 at. %.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions

Lü

Zeng

et al. 2006

Journal of Applied Physics

408

169

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“…On the other hand, there are some studies concerning the asymmetrical character of the GMI (AGMI) effect arising from the effect of torsion annealing in this amorphous wire [11,[23][24][25][26][27][28][29]. Such an AGMI is observed in the diagonal Note that ζ φφ is obtained by applying a circular magnetic field H φ produced by a dc electric current flowing along the wire [20].…”

Section: Influence Of the Induced Magnetic Anisotropy On The Gmi Resp...mentioning

confidence: 99%

Influence of an ac magnetic field and induced magnetic anisotropy on the surface magnetoimpedance tensor in an amorphous wire

Chen¹,

Zhukova²,

Zhukov³

et al. 2004

J. Phys. D: Appl. Phys.

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The influence of an ac magnetic field and the induced magnetic anisotropy (by field annealing and torsion annealing) on the magnetoimpedance (MI) tensor in an amorphous wire has been analysed. The experimental measurements were carried out in an amorphous wire of composition (Co0.94Fe0.06)72.5Si12.5B15, with a negative, nearly zero magnetostriction constant, excited either by an ac circular, hϕ, or an axial, hz, magnetic field created by an ac electric current passing along the wire or through an exciting coil mounted on the wire, respectively. The ac current amplitude was changed from 7.5 to 40 mA and the current frequency f was varied from 1.5 to 20 MHz. The induced magnetic anisotropies modify the MI response drastically. The field annealed sample shows a unique peak of the MI effect, while the torsion annealed sample presents an asymmetric giant magnetoimpedance ratio associated with the induced magnetic anisotropy which provokes such thermal treatments.

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The study on the magnetic interaction between the duel magnetic layers and the FINEMET ribbon

Liu,

Li,

Sun

et al. 2024

Physica B: Condensed Matter

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Erratum: “Analysis of asymmetric giant magnetoimpedance in field-annealed Co-based amorphous ribbon” [Appl. Phys. Lett. 75, 2114 (1999)]

Cited by 7 publications

References 0 publications

Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions

Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions

Influence of an ac magnetic field and induced magnetic anisotropy on the surface magnetoimpedance tensor in an amorphous wire

The study on the magnetic interaction between the duel magnetic layers and the FINEMET ribbon

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