Erratum: ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone [J. Electrochem. Soc., 152, G213 (2005)]

Liu, Xinye; Ramanathan, Sasangan; Longdergan, Ana; Srivastava, Anuranjan; Lee, Eddie; Seidel, Thomas E.; Barton, Jeffrey T.; Pang, D.; Gordon, Roy G.

doi:10.1149/1.1894400

Cited by 17 publications

(16 citation statements)

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“…It has already been applied to coating of nanoparticles,28–31 carbon nanotube electronics,32–34 and energy systems, and interest is increasing in the use of selective ALD 35, 36. Dozens of different ALD process chemistries have been identified,37–42 which place a premium on rapid characterization and understanding of ALD process performance and material quality as realized in nanostructure devices.…”

Section: Discussionmentioning

confidence: 99%

TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

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Robertson

Banerjee

et al. 2008

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Nanotubes are fabricated by atomic layer deposition (ALD) into nanopore arrays created by anodic aluminum oxide (AAO). A transmission electron microscopy (TEM) methodology is developed and applied to quantify the ALD conformality in the nanopores (thickness as a function of depth), and the results are compared to existing models for ALD conformality. ALD HfO2 nanotubes formed in AAO templates are released by dissolution of the Al2O3, transferred to a grid, and imaged by TEM. An algorithm is devised to automate the quantification of nanotube wall thickness as a function of position along the central axis of the nanotube, by using a cylindrical model for the nanotube. Diffusion-limited depletion occurs in the lower portion of the nanotubes and is characterized by a linear slope of decreasing thickness. Experimentally recorded slopes match well with two simple models of ALD within nanopores presented in the literature. The TEM analysis technique provides a method for the rapid analysis of such nanostructures in general, and is also a means to efficiently quantify ALD profiles in nanostructures for a variety of nanodevice applications.

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Section: Discussionmentioning

confidence: 99%

TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

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Robertson

Banerjee

et al. 2008

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“…Among the various thin-film deposition techniques, atomic layer deposition (ALD) is the most preferred method due to its supreme thickness controllability and unprecedented step coverage . While the initial applications of ALD in the semiconductor field started with simple oxides, such as Al 2 O 3 , ZrO 2 , and HfO 2 , − this technique can also be applied to more complicated multi-cation oxide films. Extensive research studies have been conducted to grow multicomponent dielectric films, such as SrTiO 3 , and semiconductor films, such as In-Ga-Zn-O (IGZO), using the ALD technique. − However, a precise understanding of the behavior of multicomponent metal oxide ALD is generally challenging due to its complexity compared with the ALD of (binary) component oxides.…”

Section: Introductionmentioning

confidence: 99%

Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications

et al. 2020

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The growth behaviors and electrical performances of semiconducting ZnO, SnO2, and (Zn,Sn)O x thin films, grown by atomic layer deposition (ALD) using O3 as the oxygen source, were studied. A significant incubation stage was observed for ZnO ALD on the Si substrate, but not for the SnO2 thin-film substrate. The incubation cycles, along with the grain size, were increased with O3 feeding time, implying that the reactivity of the Zn-precursor varied with the degree of oxidation of the Si surface. The adsorption of the Zn-precursor in the early stage of (Zn,Sn)O x ALD was facilitated with an increasing concentration ratio of Sn to Zn. The electrical performance of the (Zn,Sn)O x film as a channel layer was estimated by fabricating bottom-gate thin-film transistors (TFTs). The TFT transfer curves showed an evident negative shift of threshold voltage as the Sn-concentration increased in (Zn,Sn)O x films. The best electrical performance of the oxide TFTs was observed when the Sn-concentration was 40 at % with a threshold voltage of −0.12 V, subthreshold swing of 0.33 V decade–1, field-effect mobility of 13.6 cm2 V–1 s–1, and saturation mobility of 6.20 cm2 V–1 s–1. The amorphous structure of the films could be retained up to 600 °C of post-annealing. These performances are promising for the next-generation TFT for a vertical NAND flash or cell-stacked dynamic random access memory.

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“…[11,12] Here, we want to note that the GPC that we observed are in line with previous investigations made with commercial ALD reactors. [9,13] The most important difference in the growth properties of the two samples is given by the different amount of SiO 2 formed during the ALD of HfO 2 . To determine the thickness of the SiO 2 present in the two samples before and after the initial ALD cycles, we used the intensities of the Si2p contributions from the bulk and the oxidized Si atoms.…”

Section: Resultsmentioning

confidence: 99%

In‐Situ Studies of ALD Growth of Hafnium Oxide Films

et al. 2009

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Hafnium oxide (HfO 2 ), with its dielectric constant of about 20, large band gap of about 5.6 eV, and band offset with Si of at least 1.5 eV on both valence and conduction band sides, [1] is the material of choice for the current and future generation of CMOS transistor and non-volatile-memory technologies. For an effective implementation of HfO 2 , an issue related to the formation of an interfacial layer with poor dielectric properties needs to be solved. That interfacial layer, in fact, increases the equivalent oxide thickness (EOT) of the oxide stack in the MOS structure. [1] As the EOT for future technology nodes should scale to values lower than 1 nm, the formation of the interfacial layer must be reduced to the monolayer range. A way to achieve this is to control the early stages of the film growth and to reduce the reaction with the substrate by decreasing the growth temperature. In order to decrease the EOT values, atomic layer deposition (ALD) of the high-k oxide was implemented, as the ALD method is capable of delivering very homogeneous thin films of the targeted stoichiometry at low temperatures, although it has often been observed that the ALD growth of HfO 2 is accompanied by an increase in the interfacial layer. [2] No definitive explanation of the mechanism leading to that increase has yet been found. In this contribution, we show a study of the interfacial layer during the formation of the oxide, making use of our in situ approach that permits investigation of the ALD growth by means of X-ray photoelectron spectroscopy (XPS) after each deposition cycle. We also characterized the initial surface of the substrate before the ALD cycles by means of ultra high vacuum (UHV) atomic force microscopy (AFM). XPS is a very powerful tool technique for investigating interfaces, as one can get important chemical and physical information over a region of a few nanometers underneath the thin film surface. The photoemission experiments, when carried out with synchrotron radiation, take advantage of the high photon energy resolution and the possibility of tuning the photon energy over a wide range, allowing either surface or bulk-sensitive spectra to be recorded. We have used such techniques to identify substrate induced silicate formation for both Pr 2 O 3 and HfO 2 dielectric films. [3] AFM delivers the local topographical information of the substrate. The main advantage of using the UHV-AFM system is the ability to control the surface perfection of the initial substrate and to investigate clean and artifact-free surfaces. Correlating the information obtained during the initial growth of HfO 2 films obtained with the two techniques, we are able to get an insight into the mechanisms leading to the interfacial growth during the ALD. ExperimentalTwo different oxidized Si (001) samples were used, with initial oxide thicknesses of 2.2 and 1.5 nm (Sample A and B, respectively). Both samples were etched in a diluted HF solution and then introduced into the fast entry of the equipment. For both substrates, the time of ...

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Erratum: ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone [J. Electrochem. Soc., 152, G213 (2005)]

Cited by 17 publications

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TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications

In‐Situ Studies of ALD Growth of Hafnium Oxide Films

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Erratum: ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone [J. Electrochem. Soc., 152, G213 (2005)]

Cited by 17 publications

References 0 publications

TEM‐Based Metrology for HfO2 Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

TEM‐Based Metrology for HfO2 Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications

In‐Situ Studies of ALD Growth of Hafnium Oxide Films

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TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures