ERDA of solar selective absorbers

Assmann, W.; Reichelt, Th.; Eisenhammer, T.; Huber, Heinz P.; Mahr, Alexander; Schellinger, H.; Wohlgemuth, R.

doi:10.1016/0168-583x(95)01303-2

Cited by 25 publications

(9 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4), although they also show a narrower wavelength window, and are probably still not sufficiently stable to be useful. Despite this improved stability, films still fail by the reported mechanism of Cu migration to the outer surface [3]. What is unusual in these results is that the outer layer is not an oxide as anticipated and assumed in the literature, but in all cases is clearly nitrogen rich with a thin underlying oxide film overlying the largely intact TiO,Ny (Fig.…”

Section: Resultsmentioning

confidence: 76%

See 1 more Smart Citation

XPS and SIMS characterisation of TiOxNy solar absorber films

Metson

Prince

Bittar

et al. 2001

Ionics

View full text Add to dashboard Cite

Abstract. Solar thermal collectors have been prepared with thin TiO,Ny films deposited using ion beam assisted deposition, on Si and Cu substrates. The films are amorphous and x and y were controlled by altering the O2/N 2 ratio in the gas source. After annealing at temperatures of 200 -400 ~ films have been depth profiled using Secondary Ion Mass Spectrometry. Profiles reveal the degradation of the film, particularly for films on Cu substrates, by migration of the substrate atoms through the films, to the sample surface. In general, films with xl show improved temperature stability, ultimately at the expense of a reduced transmission window.Contrary to previous suggestions in the literature, the degradation mechanism initially involves the formation of a nitrogen rich phase, rather than an oxide at the film surface. On copper substrates, the nature of the films and of this phase, formed by diffusion of the substrate atoms, have been investigated by X-ray photoelectron spectroscopy (XPS). These investigations reveal complex behaviour in the early stages of film failure, with the suggestion that the initial films, at least near the surface, are two phase, and the reaction layer mixes the TiOxNy with some Ti replacement by ions from the Cu substrate.

show abstract

Section: Resultsmentioning

confidence: 76%

“…The more effective the film, the higher the operational temperatures it will experience. At temperatures above 300 ~ the optical characteristics of the film are destroyed by migration of the substrate element through the film [3].…”

Section: Introductionmentioning

confidence: 99%

XPS and SIMS characterisation of TiOxNy solar absorber films

Metson

Prince

Bittar

et al. 2001

Ionics

View full text Add to dashboard Cite

show abstract

“…The stability of such films at working temperatures up to 300°C is currently their performancelimiting factor. Typically, failure occurs at operating temperatures of >200°C by migration of the substrate element through the film to the film/air interface, 3 destroying the optical properties of the layer.…”

Section: Introductionmentioning

confidence: 99%

SIMS depth profiling of TiOxNy films

Metson

Prince

1999

Surf. Interface Anal.

View full text Add to dashboard Cite

Amorphous TiOxNy films of varying stoichiometry have been deposited on Si and Cu substrates using ion‐assisted deposition (IAD). The structure of the films and the effects of annealing in the 200–450 °C range have been examined. Secondary ion mass spectrometry (SIMS) has been used to investigate the near surface and the buried film/substrate interface. The Cs+ adduct approach has proved well suited to the depth profiling of these films, and provides a good test of the degree to which some of the common problems associated with SIMS depth profiles can be mitigated. Work function corrections based on the Cs+ yield have been used to refine further the MCs+ intensities and resolve structure, particularly at the film/metal interface. Under most experimental conditions for these films, the knock‐on effect is observed to distort profiles by more than the matrix effects on ion yields. Profiles reveal a complex degradation mechanism, which is somewhat contradictory to that reported in the previous literature. The suggested mechanism of Cu migration through the film driven by oxide formation at the outer surface, is operative only at elevated temperatures approaching complete breakdown of the films. In the operational range up to ∼350 °C, Cu is observed to migrate through the film to the outer surface, however a nitrogen‐rich layer is observed overlying a thin oxide zone and a largely intact TiON film. Copyright © 1999 John Wiley & Sons, Ltd.

show abstract

“…Transition metal oxynitrides (TM-O-N) are considered as promising multifunctional materials. A variety of the potential applications anticipated for metal oxynitrides (electrochromic coatings, biocompatible coatings, nanocrystalline solar cells and catalysts, selective solar absorbers [1][2][3][4]) is a result of the wide range of chemical compositions of TM-O-N determining their physical, chemical and functional properties. The interest in transition metal oxynitrides progressively increases, and a considerable number of publications devoted to them appears in the scientific literature [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Optical, electrical and mechanical properties of the tantalum oxynitride thin films deposited by pulsing reactive gas sputtering

Dréo¹,

Banakh²,

Keppner³

et al. 2006

Thin Solid Films

View full text Add to dashboard Cite

Thin films of tantalum oxynitride were prepared by reactive magnetron sputtering using a Ta target and N 2 and O 2 as reactive gases. The nitrogen flow was kept constant while the oxygen flow was pulsed periodically. The film composition evolves progressively from TaO 0.25 N 1.51 to TaO 2.42 N 0.25 while increasing the oxygen pulse duty cycle without any abrupt change in the elemental content. The optical transmission spectra of the films deposited on glass show a "blue shift" of the absorption edge with increasing oxygen content. X-ray diffraction (XRD) patterns of all films exhibit broad peaks typical for nanocrystalline materials. Cross-section film morphology is rather featureless and surface topography is smooth exhibiting very small grains, in agreement with the results obtained by XRD. The optical properties of the films are very sensitive to their chemical composition. All films exhibit semiconducting behaviour with an optical band gap changing from 1.85 to 4.0 eV with increasing oxygen content. In order to evaluate the potential of the tantalum oxynitride films for microelectronic applications some Ta-O-N films were integrated in a MOS structure. The results of the capacitance-voltage measurements of the system Al//Ta-O-N//p-Si are discussed with respect to the chemical composition of the Ta-O-N films.

show abstract

ERDA of solar selective absorbers

Cited by 25 publications

References 10 publications

XPS and SIMS characterisation of TiOxNy solar absorber films

XPS and SIMS characterisation of TiOxNy solar absorber films

SIMS depth profiling of TiOxNy films

Optical, electrical and mechanical properties of the tantalum oxynitride thin films deposited by pulsing reactive gas sputtering

Contact Info

Product

Resources

About