2014
DOI: 10.1364/oe.22.025993
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Erbium-doped spiral amplifiers with 20 dB of net gain on silicon

Abstract: Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10(20) cm(-3) and 0.95 × 10(20) cm(-3), respectively. The no… Show more

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Cited by 89 publications
(77 citation statements)
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References 30 publications
(57 reference statements)
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“…To increase the absorption cross section, ytterbium ions (Yb 3+ ) are usually codoped as a sensitizer. Er 3+ -Yb 3+ codoped waveguide amplifiers (EYCDWAs) are therefore expected to be an attractive high-gain medium material for optical amplification15161718. With the development of optical communication, optical waveguide amplifiers with high gain are required urgently.…”
mentioning
confidence: 99%
“…To increase the absorption cross section, ytterbium ions (Yb 3+ ) are usually codoped as a sensitizer. Er 3+ -Yb 3+ codoped waveguide amplifiers (EYCDWAs) are therefore expected to be an attractive high-gain medium material for optical amplification15161718. With the development of optical communication, optical waveguide amplifiers with high gain are required urgently.…”
mentioning
confidence: 99%
“…Demonstrated applications include an Al 2 O 3 :Er 3+ waveguide amplifier with 170 GBit/s transmission [23], an Al 2 O 3 :Er 3+ spiral-shaped waveguide amplifier with 20 dB total internal net gain [112], a zero-loss power splitter [113], as well as monolithic integration of Al 2 O 3 :Er 3+ amplifiers with silicon-on-insulator waveguides [114], see Fig. 6, and Al 2 O 3 :Nd 3+ amplifiers with polymer optical backplanes [115].…”
Section: B Spectroscopy and Gainmentioning
confidence: 99%
“…The great success of erbium-doped fiber amplifiers near 1.5 µm has triggered significant research on host materials and fabrication techniques for erbium-doped waveguide amplifiers (EDWA) [1][2][3][4][5]. Optical losses have limited the widespread application of integrated-optical circuit chips.…”
Section: Introductionmentioning
confidence: 99%