Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam J. Appl. Phys. 113, 043506 (2013); 10.1063/1.4789010 Physical characterization of ZnO nanorods grown on Si from aqueous solution and annealed at various atmospheres J.ZnO hybrid materials with singly precipitated ZnO nanocrystals embedded in the glass surface were fabricated by melt-quenching method followed by the annealing process. A series of samples containing different densities and species of intrinsic defects were obtained under different annealing conditions in a controllable manner, which was an ideal platform to identify the complicated defect origins. By employing photoluminescence (PL), excitation-dependent PL, PL excitation (PLE), and Raman spectroscopy, the radiative transitions of visible emission bands at around 401, 490, and 528 nm were unambiguously involved with zinc interstitial-related defect levels as initial states, and the corresponding terminal states were suggested to be valence band, oxygen vacancies, and zinc vacancies, respectively. This study may deepen the fundamental understanding of defectrelated emissions and physics in ZnO and benefit potential applications of ZnO hybrid materials in optoelectronics. V C 2015 AIP Publishing LLC. [http://dx.