Er^3+/Yb^3+-codoped phosphate glass for short-length high-gain fiber lasers and amplifiers

Feng-xiao, Wang; Song, Feng; An, Shuangxin; Wan, Wenshun; Guo, Hao; Liu, Shujing; Tian, Jianguo

doi:10.1364/ao.54.001198

Cited by 16 publications

(4 citation statements)

References 24 publications

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“…Er:Yb:glass lasers serve as an excellent base for a CEP stabilization system due to the intrinsically low timing jitter [18]. This increased performance may be due to cooperative energy transfer, reduced back-conversion transfer, and up-conversion losses present in Er, Yb co-doped solid-state lasers [19]. In addition, the high power with short pulses intrinsic to the soliton modelocked design [20] aids in large signal to noise ratio (SNR) inside the f-2f interferometers.…”

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confidence: 99%

Carrier-envelope phase stabilization of an Er:Yb:glass laser via a feed-forward technique

et al. 2019

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Few-cycle pulsed laser technology highlights the need for control and stabilization of the carrier-envelope phase (CEP) for applications requiring shot-to-shot timing and phase consistency. This general requirement has been achieved successfully in a number of free-space and fiber lasers via feedback and feed-forward methods. Expanding upon existing results, we demonstrate CEP stabilization through the feed-forward method applied to a SESAM mode-locked Er:Yb:glass laser at 1.55 µm with a measured ultralow timing jitter of 2.9 as (1 Hz -3 MHz) and longterm stabilization over a duration of eight hours. Singledigit attosecond stabilization at telecom wavelengths opens a new direction in applications requiring ultrastable frequency and time precision such as highresolution spectroscopy and fiber timing networks.With the rise of few-cycle pulses in the femtosecond and attosecond regimes, stabilizing and controlling the carrier-envelope phase (CEP) has become increasingly important. Optical frequency metrology, for instance, requires optical frequency combs with well-known pulse characteristics [1,2]. In high harmonic generation and attosecond pulse generation, the intensity of the electric field is strongly coupled to the strength and shape of the generated light [3,4]. Optical frequency standards and clocks demonstrate the same challenges as optical frequency metrology to an even higher degree and greater control of the CEP will undoubtedly become important.The shot-to-shot slippage of the CEP in mode-locked lasers largely arises from intracavity environmental conditions and optical power fluctuations. For a single shot, these conditions lead to a difference in the phase velocity and group velocity. This difference results in a phase shift (∆ ) of the carrier electric wave under the pulse envelope, often on the order of thousands of radians, which has been termed the group-phase offset. The relative shift of the envelope with respect to the peak of the electric field, constrained from zero to 2π, is the CEP. In free-running modelocked lasers, the intracavity conditions are unstable and will cause the CEP to vary. The CEP results in a frequency shift of the modelocked comb structure by the carrier-envelope offset (CEO) frequency [5], , given by = ∆(1)

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confidence: 99%

Carrier-envelope phase stabilization of an Er:Yb:glass laser via a feed-forward technique

et al. 2019

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“…The model parameters are chosen to match the parameters experimentally obtained or derived for the Er-doped layer. The values of unknown parameters such as the ytterbium lifetime (1.5 ms), its absorption cross-section (1.4 × 10 -20 cm 2 ) and up-conversion coefficient (0.8 × 10 -23 m 3 s -1 ) are obtained from the literature on similar glass systems [35,36,37]. Figure 6 and Figure 7 present simulation results for both waveguide configurations focusing on the important performance metrics of the EDWA devices.…”

Section: Channel Amplifiermentioning

confidence: 99%

Erbium-doped polymer waveguide amplifiers for PCB-integrated optical links

Ziarko

Bamiedakis

Kumi-Barimah

et al. 2019

Optical Interconnects XIX

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Optical technologies are increasingly considered for use inside high -performance electronic systems to overcome the performance bottleneck of electrical interconnects when operating at high frequencies and provide high -speed communication between electronic chips and modules. Polymer waveguides are a leading candidate to implement boardlevel optical interconnections as they exhibit favourable mechanical, thermal and optical properties for direct integration onto conventional printed circuit boards (PCBs). Numerous system demonstrators have been reported in recent years featuring different types of polymer materials and opto-electronic (OE) PCB designs. However, all demonstrated polymerbased interconnection technologies are currently passiv e, which limits the length of the on-board links and the number of components that can be connected in optical bus architectures. In this paper therefore, we present work towards the formation of low-cost optical waveguide amplifiers that can be readily integrated onto standard PCBs by combining two promising optical technologies: siloxane-based polymer waveguides and ultra-fast laser plasma implantation (ULPI). Siloxane-based waveguides exhibit high-temperature resistance in excess of 300°C and low loss at different wavelength ranges, while ULPI has been demonstrated to produce very high dopant concentrations in thin films with values of 1.63×10 21 cm −3 recently reported in Er-doped silica layers. Here we present detailed simulation studies that demonstrate the potential to achieve a net gain of up to 8 dB/cm from such structures and report on initial experimental work on Erdoped polymer films and waveguides demonstrating photoluminescence and good lifetimes.

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“…5). The key parameters used in the EDWA simulations are listed in Table 1 and are based on values either extracted from fabricated glass samples using the UPLI method [28] or reported in literature on similar Er-doped glass systems [33]- [35]. The main unknown parameters for the hybrid structures are the upconversion factor and the background waveguide propagation loss.…”

Section: Hybrid Edwa Studiesmentioning

confidence: 99%

Erbium-Doped Polymer Waveguide Amplifiers for Board-Level Optical Interconnects

Ziarko

Bamiedakis

Kumi-Barimah

et al. 2019

2019 21st International Conference on Transparent Optical Networks (ICTON)

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Optical interconnects have an important role to play in next-generation high-performance electronic systems by enabling power-efficient high-speed board-level communication links. Polymer-based optical waveguides is a leading technology for integrating optical links onto standard printed circuit boards as it is sufficiently low cost and enables cost-effective manufacturing and assembly. Various polymer-based optical backplanes have been reported in recent years enabling different on-board interconnection architectures. However, all currently demonstrated systems are purely passive, which limits therefore the reach, complexity and functionality of these on-board systems. Here, we present recent simulation and experimental studies towards the development of Erdoped polymer-based waveguide amplifiers. Two different approaches to integrate Er-doped materials in siloxane polymer are investigated: (i) ultrafast laser plasma implantation of Er-doped glasses and (ii) solutionbased dispersion of Er-doped nanoparticles. Experimental and simulation results on the achievable performance from such waveguide amplifiers are presented focusing on impact of the waveguide loss and upconversion on the gain figure.

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Er^3+/Yb^3+-codoped phosphate glass for short-length high-gain fiber lasers and amplifiers

Cited by 16 publications

References 24 publications

Carrier-envelope phase stabilization of an Er:Yb:glass laser via a feed-forward technique

Carrier-envelope phase stabilization of an Er:Yb:glass laser via a feed-forward technique

Erbium-doped polymer waveguide amplifiers for PCB-integrated optical links

Erbium-Doped Polymer Waveguide Amplifiers for Board-Level Optical Interconnects

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