Equivalent Oxide Thickness (EOT) Scaling With Hafnium Zirconium Oxide High-κ Dielectric Near Morphotropic Phase Boundary

Ni, Kai; Saha, Atanu; Chakraborty, Wriddhi; Ye, Huacheng; Grisafe, Benjamin; Smith, J. A.; Rayner, G. B.; Gupta, Sumeet Kumar; Datta, Suman

doi:10.1109/iedm19573.2019.8993495

Cited by 27 publications

(46 citation statements)

References 5 publications

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“…Phase-field modeling predicted the existence of a MPB in the HfO 2 –ZrO 2 solid solution, but the extreme closeness of energy between different polymorphs (FE orthorhombic and AFE tetragonal structures) causes a substantial change in MPB composition. − Moreover, the activation energy for the phase transition from the tetragonal (t) (AFE) to orthorhombic (o) (FE) phase can be supplied by either a mechanical force, in the form of internal strains generated during the fabrication process, or electrical force provided by an external electric field . Therefore, it was shown that a nanolaminate structure composed of FE o-HZO(0.5) and AFE t-ZrO 2 can enhance the dielectric response of HfO 2 –ZrO 2 thin films. , The FE behavior in ultrathin HfO 2 can be maintained and even increased by introduction of Zr dopants .…”

Section: Introductionmentioning

confidence: 99%

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Kashir

Farahani

Kamba

et al. 2021

ACS Appl. Electron. Mater.

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Engineering of HfO 2 −ZrO 2 ferroelectric thin films can substantially increase their dielectric constant. Here, we investigate dielectric and structural properties of ∼10 nm thin films consisting of stacked 1 nm thin ferroelectric (FE) Hf 1−x Zr x O 2 (HZO(x)) and antiferroelectric (AFE) ZrO 2 layers. At x < 0.5, the measurements of polarization vs electric field revealed pure FE hysteresis loops, whereas at x > 0.5, pinched hysteresis loops with some remnant polarization were observed, which indicate a coexistence of FE and AFE orderings. Finally, a pure ZrO 2 thin film (x = 1) exhibits only an AFE double hysteresis loop. In this way, we demonstrate that the coexistence of FE and AFE orderings can be controlled by adjusting the composition of HZO(x) layers in the HZO(x)/ZrO 2 nanolaminate films. At x = 0.5, the dielectric constant is ∼60 in nanolaminate films, which is much higher than that of the conventional HZO(x) solid solution thin films. Structural investigations confirm a coexistence of polar orthorhombic and nonpolar tetragonal structures, which is consistent with the observed polarization hysteresis loops. We also show that the strain generated in the nanolaminate structure significantly facilitates a field-induced transition from the AFE to the FE phase. The design does not considerably affect the leakage current in HZO(x)/ZrO 2 nanolaminate films, which makes this system highly promising for complementary metal oxide semiconductor-compatible capacitors.

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Section: Introductionmentioning

confidence: 99%

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Kashir

Farahani

Kamba

et al. 2021

ACS Appl. Electron. Mater.

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“…On one end (x = 0), it is monoclinic (m-phase) and thus paraelectric, whereas on the other end (x = 1), it is tetragonal (t-phase) and purely anti-ferroelectric (AFE). In between, by adjusting the fabrication conditions, it exhibits a non-centrosymmetric orthorhombic ferroelectric (FE) phase (o-phase) [20]. The multiphase in HZO is located between the boundary of the FE and AFE phases [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…In between, by adjusting the fabrication conditions, it exhibits a non-centrosymmetric orthorhombic ferroelectric (FE) phase (o-phase) [20]. The multiphase in HZO is located between the boundary of the FE and AFE phases [18][19][20]. The existence of MPB in HZO system opened a new challenge to increase the dielectric properties of a silicon-compatible compound because the use of ZrO2 and HfO2 in the semiconductor fabrication process is in the mature stage.…”

Section: Introductionmentioning

confidence: 99%

“…Despite the numerous advantages of the existence of the MPB region in HZO films, very few studies have been conducted to date, and there has not been any direct evidence that supports the presence of the MPB phenomenon in HZO materials [18][19][20]. In this study, we fabricate the HZO- was established that metals with relatively low TEC compared to HZO provided additional driving force for t-to o-phase transition during rapid thermal annealing (RTA) [34].…”

Section: Introductionmentioning

confidence: 99%

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Ferroelectric and Dielectric Properties of Hf_0.5Zr_0.5O₂ Thin Film Near Morphotropic Phase Boundary

Kashir

Hwang

2021

Physica Status Solidi (a)

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Since the discovery of ferroelectric (FE) properties in HfO 2 -based materials, [1] numerous advantages, such as simple structures, strong binding energy between oxygen and transition metal ions, large bandgap (%5.3-5.7 eV), and compatibility with current complementary metal-oxide semiconductor technologies, led to extensive research that focused on potential diverse applications, such as FE memory, ferroelectric field-effect transistors (Fe-FETs), pyroelectric sensors, and energy harvesters. Meanwhile, from the material survey of FEs, it is conventional that the structural phase transition induced by a compositional change plays a special role in obtaining excellent piezoelectric and dielectric properties. [2][3][4][5][6][7][8][9] The phase boundary known as morphotropic phase boundary (MPB) separates regions of different symmetries by varying their composition in FEs. [2][3][4][5][6][7][8][9] In fact, when different structural phases are almost degenerated near the MPB, rotations of polarization occur in response to external electric fields instead of a change in the magnitude of polarization. [5] Consequently, materials exhibit maximum piezoelectric and dielectric responses near the MPB, as several phases coexist, and there is nearly no energy barrier separating them. The MPB has garnered significant practical interest, because the variable that drives the transition (i.e., compositions) is inherent. Therefore, it provides an alternative approach to boost the dielectric constant ϵ r without degrading the bandgap. MPB ceramics are the basis of a wide range of piezoelectric and dielectric technologies, such as high-k materials, sensors, actuators, smart systems, ultrasound generation, and sensing and underwater acoustics. These applications motivated researchers to investigate the existence of MPB in the novel promising ceramic compounds, e.g., PbHfO 3 -PbTiO 3 -Pb(Mg 1/3 Nb 2/3 )O 3 , [10,11] lead-free BiFeO 3 -BaTiO 3 , [12,13] Pb(In 1/

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“…It is unsurprising that the MPB between the tetragonal and orthorhombic phases of HZO has also sparked interest. The dielectric constant peaks near this boundary [93,94], while also being dependent on film thickness.…”

Section: Functional Propertiesmentioning

confidence: 99%

Growth of binary oxides on Si substrates: solid solutions of SiO2-GeO2 and HfO2-ZrO2

Lleonart¹

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Equivalent Oxide Thickness (EOT) Scaling With Hafnium Zirconium Oxide High-κ Dielectric Near Morphotropic Phase Boundary

Cited by 27 publications

References 5 publications

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Ferroelectric and Dielectric Properties of Hf_0.5Zr_0.5O₂ Thin Film Near Morphotropic Phase Boundary

Growth of binary oxides on Si substrates: solid solutions of SiO2-GeO2 and HfO2-ZrO2

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Equivalent Oxide Thickness (EOT) Scaling With Hafnium Zirconium Oxide High-κ Dielectric Near Morphotropic Phase Boundary

Cited by 27 publications

References 5 publications

Hf1–xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric

Hf1–xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric

Ferroelectric and Dielectric Properties of Hf0.5Zr0.5O2 Thin Film Near Morphotropic Phase Boundary

Growth of binary oxides on Si substrates: solid solutions of SiO2-GeO2 and HfO2-ZrO2

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Product

Resources

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Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Ferroelectric and Dielectric Properties of Hf_0.5Zr_0.5O₂ Thin Film Near Morphotropic Phase Boundary