Abstract:We have combined first-principles calculations and high pressure experiments to study pressure induced phase transitions in silicon nitride (Si3N4). Within the quasi-harmonic approximation, we predict that the α phase is always metastable relative to the β phase over the wide pressuretemperature range. Our lattice vibration calculations indicate that there are two significant and competing phonon-softening mechanisms in the β-Si3N4, while phonon softening in the α-Si3N4 is rather moderate.When the previously o… Show more
“…These results indicate that the β‐γ phase boundary is located at a pressure between 10 and 13 GPa under high temperatures from 1600 to 1800°C. On the other hand, the theoretically predicted β‐γ phase boundaries are inconsistent with each other and they are located at pressures between 6 and 12 GPa. With respect to the postspinel phase boundary, only some theoretical studies have been carried out and they predicted that the transition occurs at a pressure of 150‐210 GPa (ref.…”
Phase relations in silicon and germanium nitrides (Si3N4 and Ge3N4) were investigated using a Kawai‐type multianvil apparatus and a laser‐heated diamond anvil cell combined with a synchrotron radiation. The pressure‐induced phase transition from the β to γ (cubic spinel‐type structure) phase was observed in both compositions. We observed the coexistence of the β and γ phases in Si3N4 at 12.4 GPa and 1800°C, while the appearance of single phase γ‐Ge3N4 was observed at pressures above 10 GPa. Our observations under higher pressures revealed that γ‐Si3N4 and γ‐Ge3N4 have wide stability fields and no postspinel transition was observed up to 98 GPa and 2400°C in both compositions. Using the room‐temperature compression curves of these materials, the bulk moduli (K0) and their pressure derivatives (K′0) were determined: K0 = 317 (16) GPa and K′0 = 6.0 (8) for γ‐Si3N4; K0 = 254 (13) GPa and K′0 = 6.0 (7) for γ‐Ge3N4.
“…These results indicate that the β‐γ phase boundary is located at a pressure between 10 and 13 GPa under high temperatures from 1600 to 1800°C. On the other hand, the theoretically predicted β‐γ phase boundaries are inconsistent with each other and they are located at pressures between 6 and 12 GPa. With respect to the postspinel phase boundary, only some theoretical studies have been carried out and they predicted that the transition occurs at a pressure of 150‐210 GPa (ref.…”
Phase relations in silicon and germanium nitrides (Si3N4 and Ge3N4) were investigated using a Kawai‐type multianvil apparatus and a laser‐heated diamond anvil cell combined with a synchrotron radiation. The pressure‐induced phase transition from the β to γ (cubic spinel‐type structure) phase was observed in both compositions. We observed the coexistence of the β and γ phases in Si3N4 at 12.4 GPa and 1800°C, while the appearance of single phase γ‐Ge3N4 was observed at pressures above 10 GPa. Our observations under higher pressures revealed that γ‐Si3N4 and γ‐Ge3N4 have wide stability fields and no postspinel transition was observed up to 98 GPa and 2400°C in both compositions. Using the room‐temperature compression curves of these materials, the bulk moduli (K0) and their pressure derivatives (K′0) were determined: K0 = 317 (16) GPa and K′0 = 6.0 (8) for γ‐Si3N4; K0 = 254 (13) GPa and K′0 = 6.0 (7) for γ‐Ge3N4.
“…The condensed nitrogen is introduced either as a cryogenic liquid or as a pressurized gas into DACs and can act as a pressure transmitting medium (PTM). In high-P,T experiments the use of a nitrogen PTM can stabilize nitride materials for studies under extreme conditions, and facilitate the formation of new structures [91][92][93]. It can also act as a reaction component in high-P,T synthesis experiments [17-20, 53, 91, 94].…”
Section: High Pressure Synthesis Approachesmentioning
The solid state chemistry leading to the synthesis and characterization of metal nitrides with N:M ratios > 1 is summarized. Studies of these compounds represent an emerging area of research. Most transition metal nitrides have much lower nitrogen contents, and they often form with nonor sub-stoichiometric compositions. These materials are typically metallic with often superconducting properties, and they provide highly refractory, high hardness materials with many technological applications. The higher metal nitrides should achieve formal oxidation states (OS) attaining those found among corresponding oxides, and they are expected to have useful semiconducting properties. Only a very few examples of such high OS nitrogen-rich compounds are known at present. The main group elements typically form covalently bonded nitride ceramics such as Si 3 N 4 , Ge 3 N 4 and Sn 3 N 4 , and the early transition metals Zr and Hf produce Zr 3 N 4 and Hf 3 N 4 . However, the only main example of a highly nitrided transition metal compound known to date is Ta 3 N 5 , that has a formal oxidation state +5 and is a semiconductor with visible light absorption leading to applications as a pigment and in photocatalysis. New synthesis routes are being explored to study the possible formation of other N-rich materials that are predicted to exist by ab initio calculations. There is a useful interplay between theoretical predictions and experimental synthesis studies at ambient and high pressure conditions, as we explore and establish the existence and structure-property relations of these new nitride compounds and polymorphs. Here we review the state of current investigations and indicate possible new directions for further work.[a] European Synchrotron Radiation Facility,
“…Among these nitrides, silicon nitride (Si 3 N 4 ) is a useful ceramic with numerous applications because of its high mechanical strength, high hardness, low density, high thermal stability, good oxidization resistance and other desirable hightemperature properties. [1][2][3][4][5][6][7][8] Experimental determinations and theoretical investigations of some C 3 N 4 polymorphs and Ge 3 N 4 were extensively researched. [9][10][11][12][13][14][15][16] The theoretically searched new materials among Willemite-II-C 3 N 4 and Willemite-II-Si 3 N 4 have cubic structure with space group I " 43d.…”
The structural stability and mechanical and thermodynamic properties of WII- A 3 N 4 ( A=C , Si , Ge and Sn ) are calculated by first-principles calculations based on the density functional theory. The calculated lattice parameters and elastic constants of WII- A 3 N 4 ( A=C , Si , Ge and Sn ) are in good agreement with the experimental data and previously calculated values. WII- A 3 N 4 ( A=C , Si , Ge and Sn ) compounds are also found to be thermodynamically and mechanically stable. The results suggest that hardness of WII- C 3 N 4 is the hardest of these C 3 N 4 polymorphs. The hardness of WII- Sn 3 N 4 is the smallest among WII- A 3 N 4 ( A=C , Si , Ge and Sn ). Furthermore, the mechanical anisotropy, Debye temperature, the minimum thermal conductivity and thermodynamic properties of WII- A 3 N 4 ( A=C , Si , Ge and Sn ) compounds can be investigated.
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