Radioactive 67 Cu atoms were accelerated to 60 keV at the online isotope separator ISOLDE at CERN, and implanted into a type IIa natural diamond sample to a dose of 2 x 10 12 cm -2 . The channeling of β − particles and conversion electrons emitted in the decay of 67 Cu and 67 Zn*, respectively, were monitored about the three major axial directions with a two dimensional position-sensitive detector. The electron emission channeling data were collected from the room temperature implanted sample and after annealing at 1200 K. The observed channelling patterns were fitted with simulations based on the many beam formalism of electron motion through a crystal lattice. In the as-implanted sample, 25% of the Cu atoms were located a mean, isotropic displacement of 0.25(5) Å from substitutional sites, and the remainder, f R = 75%, at sites that gave an isotropic emission yield. Annealing at 1200 K results in enhanced axial and planar channeling effects. The fits to the data yield either a fraction f 1 = 43(5)% of Cu atoms located 0.22(4) Å from substitutional sites and f R = 57%, or a fraction f 1 = 10(2)% at substitutional sites, a fraction f 2 = 50(5) % at mean isotropic displacement of 0.5 Å from substitutional sites, and a 'random' fraction f R = 40%.Keywords: diamond, Cu lattice location, emission channelling.
Contact author :K. Bharuth-Ram, School of Physics, University of Natal, Durban 4041, South Africa Email: bharuthramk@nu.ac.za; Fax.: + 27 31 2616550; Tel.: +27 31 2602775
IntroductionInterest in transition metal (TM) defects in diamond arises from their influence on growth conditions and on the material properties of the crystals produced. TM atoms play a crucial solvent-catalyst role in the synthesis of single crystal diamonds in the high temperature high pressure (HTHP) process [1]. In the case of natural diamonds, as well as diamonds synthesized in the CVD process, the goal is to produce diamonds with tailored semiconducting properties through the incorporation of desired impurities. A considerable boost to such studies has been given recently by the synthesis of single crystal diamonds of exceptional purity in a CVD process which, with boron incorporation during growth, showed electron and hole mobilities as high as 4500 and 3800 cm 2 /Vs, respectively [2]. Except for boron and lithium, the formation energies of other potential dopant atoms in diamond are relatively high [3], thus favouring ion implantation as a means of incorporating the dopant atoms in the diamond lattice. Radioactive TM nuclides, such as 59 Fe, 57 Fe and 67 Cu, are ideal probes for investigations on implantation parameters and the annealing of radiation-induced lattice damage, as well as on the location of implanted atoms and the defect complexes that they form. Electron paramagnetic resonance (epr) studies on Ni and Co in HTHP-synthesized diamonds [4][5][6][7][8] have identified three main lattice sites for these impurity atoms: substitutional, tetrahedral (T d ) interstitial, and the 'divacancy' site in which the impurity atom is locat...