EPR and Raman study of silicon layers obtained by gas detonation spraying

Simultaneous Dangling Bond and Zincophilic Site Engineering of SiNx Protective Coatings toward Stable Zinc Anodes

“…The XRD patterns show that the Si and SiN x films on Zn or stainless steel (SS) substrates are both amorphous (Figure a and Figure S1). The Raman spectra of Si and SiN x films indicate that the peaks at ∼474.2, ∼620.6, and ∼948.5 cm –1 arise from the transverse optical (TO), transverse acoustic (TO + TA), and 2TO modes of a Si film, which are associated with the vibration of Si–Si bonds (Figure b). , However, the peak at 1332 cm –1 arises from the F 2g mode of Si–N bonds. , The weaker intensity and broader half-width of the Si (TO) mode of a SiN x film indicate an increased disorder of the SiN x layer, which is likely caused by the Si DBs and N sites. , As Figure S2 depicts, the Si–N bonds of a SiN x film at ∼910 cm –1 can also be identified by Fourier transform infrared spectroscopy (FTIR) . The chemical states of the Si and SiN x films were subsequently detected by X-ray photoelectron spectroscopy (XPS).…”

“…33,34 The weaker intensity and broader half-width of the Si (TO) mode of a SiN x film indicate an increased disorder of the SiN x layer, which is likely caused by the Si DBs and N sites. 34,35 As Figure S2 depicts, the Si−N bonds of a SiN x film at ∼910 cm −1 can also be identified by Fourier transform infrared spectroscopy (FTIR). 36 The chemical states of the Si and SiN x films were subsequently detected by X-ray photoelectron spectroscopy (XPS).…”